发明授权
US08926805B2 Method and apparatus for electroplating on SOI and bulk semiconductor wafers
有权
在SOI和体半导体晶片上电镀的方法和装置
- 专利标题: Method and apparatus for electroplating on SOI and bulk semiconductor wafers
- 专利标题(中): 在SOI和体半导体晶片上电镀的方法和装置
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申请号: US13561599申请日: 2012-07-30
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公开(公告)号: US08926805B2公开(公告)日: 2015-01-06
- 发明人: Veeraraghavan S. Basker , Eduard Cartier , Hariklia Deligianni , Rajarao Jammy , Vamsi K. Paruchuri
- 申请人: Veeraraghavan S. Basker , Eduard Cartier , Hariklia Deligianni , Rajarao Jammy , Vamsi K. Paruchuri
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Novak Druce Connolly Bove + Quigg LLP
- 主分类号: C25D17/02
- IPC分类号: C25D17/02 ; C25D5/18 ; C25D5/02 ; H01L21/288 ; C25D17/00 ; H01L21/762
摘要:
An electroplating apparatus and method for depositing a metallic layer on the surface of a wafer is provided wherein said apparatus and method do not require physical attachment of an electrode to the wafer. The surface of the wafer to be plated is positioned to face the anode and a plating fluid is provided between the wafer and the electrodes to create localized metallic plating. The wafer may be positioned to physically separate and lie between the anode and cathode so that one side of the wafer facing the anode contains a catholyte solution and the other side of the wafer facing the cathode contains an anolyte solution. Alternatively, the anode and cathode may exist on the same side of the wafer in the same plating fluid. In one example, the anode and cathode are separated by a semi permeable membrane.
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