Invention Grant
- Patent Title: Semiconductor device including contact plug and method of manufacturing the same
- Patent Title (中): 包括接触塞的半导体装置及其制造方法
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Application No.: US14186025Application Date: 2014-02-21
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Publication No.: US08928152B2Publication Date: 2015-01-06
- Inventor: Taek-soo Jeon , Bong-hyun Kim , Won-seok Yoo , Jae-hong Seo , Ho-kyun An , Dae-hyun Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0014244 20100217
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/10 ; H01L21/768 ; H01L23/522 ; H01L27/108 ; H01L21/285

Abstract:
A semiconductor device includes a substrate having a conductive area, a first pattern formed on the substrate and having a contact hole through which the conductive area is exposed, and a contact plug in the contact hole. The contact plug includes first and second silicon layers. The first silicon layer, formed from a first compound including at least two silicon atoms, is formed in the contact hole to contact a top surface of the conductive area and a side wall of the first pattern. The second silicon layer, formed from a second compound including a number of silicon atoms less than the number of the silicon atoms of the first compound, is formed on the first silicon layer and fills a remaining space of the contact hole, the second silicon layer being spaced apart from the first pattern at an entrance of the contact hole.
Public/Granted literature
- US20140167288A1 SEMICONDUCTOR DEVICE INCLUDING CONTACT PLUG AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-06-19
Information query
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