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    Semiconductor device including contact plug and method of manufacturing the same
    3.
    发明授权
    Semiconductor device including contact plug and method of manufacturing the same 有权
    包括接触塞的半导体装置及其制造方法

    公开(公告)号：US08928152B2

    公开(公告)日：2015-01-06

    申请号：US14186025

    申请日：2014-02-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Taek-soo Jeon ,  Bong-hyun Kim ,  Won-seok Yoo ,  Jae-hong Seo ,  Ho-kyun An ,  Dae-hyun Kim

    IPC: H01L23/48 ,  H01L23/52 ,  H01L29/10 ,  H01L21/768 ,  H01L23/522 ,  H01L27/108 ,  H01L21/285

    CPC classification number: H01L23/5226 ,  H01L21/28525 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/10823 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor device includes a substrate having a conductive area, a first pattern formed on the substrate and having a contact hole through which the conductive area is exposed, and a contact plug in the contact hole. The contact plug includes first and second silicon layers. The first silicon layer, formed from a first compound including at least two silicon atoms, is formed in the contact hole to contact a top surface of the conductive area and a side wall of the first pattern. The second silicon layer, formed from a second compound including a number of silicon atoms less than the number of the silicon atoms of the first compound, is formed on the first silicon layer and fills a remaining space of the contact hole, the second silicon layer being spaced apart from the first pattern at an entrance of the contact hole.

    Abstract translation: 半导体器件包括具有导电区域的基板，形成在基板上的第一图案，具有导电区域露出的接触孔和接触孔中的接触插塞。 接触插塞包括第一和第二硅层。 在包括至少两个硅原子的第一化合物形成的第一硅层形成在接触孔中以接触导电区域的顶表面和第一图案的侧壁。 在第一硅层上形成由第二化合物构成的第二硅层，该第二化合物包含少于第一化合物的硅原子数的硅原子数，并填充接触孔的剩余空间，第二硅层 在接触孔的入口处与第一图案间隔开。

    SEMICONDUCTOR DEVICE INCLUDING CONTACT PLUG AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING CONTACT PLUG AND METHOD OF MANUFACTURING THE SAME 审中-公开
    包括接触插头的半导体器件及其制造方法

    公开(公告)号：US20140167288A1

    公开(公告)日：2014-06-19

    申请号：US14186025

    申请日：2014-02-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Taek-soo Jeon ,  Bong-hyun Kim ,  Won-seok Yoo ,  Jae-hong Seo ,  Ho-kyun An ,  Dae-hyun Kim

    IPC: H01L23/522

    CPC classification number: H01L23/5226 ,  H01L21/28525 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76897 ,  H01L27/10823 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor device includes a substrate having a conductive area, a first pattern formed on the substrate and having a contact hole through which the conductive area is exposed, and a contact plug in the contact hole. The contact plug includes first and second silicon layers. The first silicon layer, formed from a first compound including at least two silicon atoms, is formed in the contact hole to contact a top surface of the conductive area and a side wall of the first pattern. The second silicon layer, formed from a second compound including a number of silicon atoms less than the number of the silicon atoms of the first compound, is formed on the first silicon layer and fills a remaining space of the contact hole, the second silicon layer being spaced apart from the first pattern at an entrance of the contact hole.

    Abstract translation: 半导体器件包括具有导电区域的基板，形成在基板上的第一图案，具有导电区域露出的接触孔和接触孔中的接触插塞。 接触插塞包括第一和第二硅层。 在包括至少两个硅原子的第一化合物形成的第一硅层形成在接触孔中以接触导电区域的顶表面和第一图案的侧壁。 在第一硅层上形成由第二化合物构成的第二硅层，该第二化合物包含少于第一化合物的硅原子数的硅原子数，并填充接触孔的剩余空间，第二硅层 在接触孔的入口处与第一图案间隔开。

    Electronic device and control method thereof
    5.
    发明授权
    Electronic device and control method thereof 有权

    公开(公告)号：US11568323B2

    公开(公告)日：2023-01-31

    申请号：US16650083

    申请日：2018-05-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyoung-hoon Kim ,  Young-hwan Park ,  Dong-kwan Suh ,  Keshava Prasad Nagaraja ,  Dae-hyun Kim ,  Suk-jin Kim ,  Han-su Cho ,  Hyun-jung Kim

    IPC: G06N3/04 ,  G06N20/10 ,  G06N3/08

    Abstract: Disclosed is an electronic device. The An electronic device including a storage, and a processor configured to perform convolution processing on target data and kernel data based on stride information that indicates an interval at which the kernel data is applied to the target data stored in the storage, in which the processor is further configured to divide the target data into a plurality of pieces of sub-data based on first stride information, perform the convolution processing on the plurality of pieces of sub-data and a plurality of pieces of sub-kernel data respectively corresponding to the plurality of pieces of sub-data based on second stride information that is different from the first stride information, and combine a plurality of processing results, the plurality of pieces of sub-kernel data are obtained by dividing the kernel data based on the first stride information, and the second stride information indicates that the interval at which the kernel data is applied to the target data is 1.

    Electronic apparatus and control method thereof
    9.
    发明授权
    Electronic apparatus and control method thereof 有权

    公开(公告)号：US11568303B2

    公开(公告)日：2023-01-31

    申请号：US16153135

    申请日：2018-10-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyoung-hoon Kim ,  Young-hwan Park ,  Dong-soo Lee ,  Dae-hyun Kim ,  Han-su Cho ,  Hyun-jung Kim

    IPC: G06N20/00

    Abstract: An electronic apparatus is provided. The electronic apparatus includes a first memory configured to store a first artificial intelligence (AI) model including a plurality of first elements and a processor configured to include a second memory. The second memory is configured to store a second AI model including a plurality of second elements. The processor is configured to acquire output data from input data based on the second AI model. The first AI model is trained through an AI algorithm. Each of the plurality of second elements includes at least one higher bit of a plurality of bits included in a respective one of the plurality of first elements.

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