发明授权
- 专利标题: Tunnel barrier sensor with multilayer structure
- 专利标题(中): 隧道屏障传感器具有多层结构
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申请号: US12468467申请日: 2009-05-19
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公开(公告)号: US08929035B2公开(公告)日: 2015-01-06
- 发明人: Hideaki Fukuzawa , Hiromi Yuasa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
- 申请人: Hideaki Fukuzawa , Hiromi Yuasa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JPP2002-092998 20020328; JPP2002-263251 20020909
- 主分类号: G11B5/60
- IPC分类号: G11B5/60 ; G11B5/33 ; G11B5/39 ; H01F10/193 ; B82Y40/00 ; G01R33/09 ; B82Y25/00 ; H01L43/08 ; H01F41/30 ; G11C11/16 ; H01L27/22 ; H01F10/32
摘要:
A magnetoresistance effect element having a magnetoresistance effect film and a pair of electrode, the magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction, a second magnetization layer whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic intermediate layer located between the first and second magnetic layers, and a film provided in the first magnetic layer, in the second magnetic layer, at an interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at an interface between the second magnetic layer and the nonmagnetic intermediate layer.
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