发明授权
- 专利标题： Thin film transistor memory and its fabricating method
- 专利标题（中）： 薄膜晶体管存储器及其制造方法
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申请号： US13812070申请日： 2012-04-24
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公开(公告)号： US08932929B2公开(公告)日： 2015-01-13
- 发明人: Shijin Ding , Sun Chen , Xingmei Cui , Pengfei Wang , Wei Zhang
- 申请人： Shijin Ding , Sun Chen , Xingmei Cui , Pengfei Wang , Wei Zhang
- 申请人地址： CN Shanghai
- 专利权人： Fudan University
- 当前专利权人： Fudan University
- 当前专利权人地址： CN Shanghai
- 代理机构： Banner & Witcoff, Ltd.
- 优先权： CN20121012964 20120410
- 国际申请： PCT/CN2012/000549 WO 20120424
- 国际公布： WO2013/152458 WO 20131017
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L29/66 ; H01L29/788
摘要：
The invention relates to a thin film transistor memory and its fabricating method. This memory using the substrate as the gate electrode from bottom to up includes a charge blocking layer, a charge storage layer, a charge tunneling layer, an active region of the device and source/drain electrodes. The charge blocking layer is the ALD grown Al2O3 film. The charge storage layer is the two layer metal nanocrystals which include the first layer metal nanocrystals, the insulating layer and the second layer metal nanocrystals grown by ALD method in sequence from bottom to up. The charge tunneling layer is the symmetrical stack layer which includes the SiO2/HfO2/SiO2 or Al2O3/HfO2/Al2O3 film grown by ALD method in sequence from bottom to up. The active region of the device is the IGZO film grown by the RF sputtering method, and it is formed by the standard lithography and wet etch method. The TFT memory in this invention has the advantage with large P/E window, good data retention, high P/E speed, stable threshold voltage and simple fabricating process.
公开/授权文献
- US20130264632A1 THIN FILM TRANSISTOR MEMORY AND ITS FABRICATING METHOD 公开/授权日：2013-10-10
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