公开(公告)号：US08932929B2

公开(公告)日：2015-01-13

申请号：US13812070

申请日：2012-04-24

Applicant: Shijin Ding ,  Sun Chen ,  Xingmei Cui ,  Pengfei Wang ,  Wei Zhang

Inventor： Shijin Ding ,  Sun Chen ,  Xingmei Cui ,  Pengfei Wang ,  Wei Zhang

IPC: H01L29/792 ,  H01L29/66 ,  H01L29/788

CPC classification number: H01L29/792 ,  H01L29/66742 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881

Abstract: The invention relates to a thin film transistor memory and its fabricating method. This memory using the substrate as the gate electrode from bottom to up includes a charge blocking layer, a charge storage layer, a charge tunneling layer, an active region of the device and source/drain electrodes. The charge blocking layer is the ALD grown Al2O3 film. The charge storage layer is the two layer metal nanocrystals which include the first layer metal nanocrystals, the insulating layer and the second layer metal nanocrystals grown by ALD method in sequence from bottom to up. The charge tunneling layer is the symmetrical stack layer which includes the SiO2/HfO2/SiO2 or Al2O3/HfO2/Al2O3 film grown by ALD method in sequence from bottom to up. The active region of the device is the IGZO film grown by the RF sputtering method, and it is formed by the standard lithography and wet etch method. The TFT memory in this invention has the advantage with large P/E window, good data retention, high P/E speed, stable threshold voltage and simple fabricating process.

Abstract translation: 本发明涉及薄膜晶体管存储器及其制造方法。 从底部到顶部使用基板作为栅电极的这种存储器包括电荷阻挡层，电荷存储层，电荷隧道层，器件的有源区和源极/漏极。 电荷阻挡层是ALD生长的Al 2 O 3膜。 电荷存储层是包括第一层金属纳米晶体，绝缘层和第二层金属纳米晶体的两层金属纳米晶体，其由ALD方法依次从下到上生长。 电荷隧穿层是对称的堆叠层，其包括通过ALD法从下到上生长的SiO 2 / HfO 2 / SiO 2或Al 2 O 3 / HfO 2 / Al 2 O 3膜。 器件的有源区是通过RF溅射法生长的IGZO膜，并且通过标准光刻和湿蚀刻法形成。 本发明的TFT存储器具有P / E窗口大，数据保持性好，P / E速度高，阈值电压稳定，制造工艺简单的优点。

公开(公告)号：US20130264632A1

公开(公告)日：2013-10-10

申请号：US13812070

申请日：2012-04-24

Applicant: Shijin Ding ,  Sun Chen ,  Xingmei Cui ,  Pengfei Wang ,  Wei Zhang

Inventor： Shijin Ding ,  Sun Chen ,  Xingmei Cui ,  Pengfei Wang ,  Wei Zhang

IPC: H01L29/792 ,  H01L29/66

CPC classification number: H01L29/792 ,  H01L29/66742 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881

Abstract: The invention relates to a thin film transistor memory and its fabricating method, This memory using the substrate as the gate electrode from bottom to up includes a charge blocking layer, a charge storage layer, a charge tunneling layer, an active region of the device and source/drain electrodes. The charge blocking layer is the ALD grown Al2O3 film. The charge storage layer is the two layer metal nanocrystals which include the first layer metal nanocrystals, the insulting layer and the second layer metal nanocrystals grown by ALD method. in sequence from bottom to up. The charge tunneling layer is the symmetrical stack layer which includes the SiO2/HfO2/SiO2 or Al2O3/HfO2/Al2O3 film grown. by ALD method in sequence from bottom to up. The active region of the device is the IGZO film grown by the RF sputtering method, and it is formed by the standard lithography and wet etch method. The TFT memory in this invention has the advantage with large P/E window, good data retention, high P/E speed, stable threshold voltage and simple fabricating process.

Abstract translation: 本发明涉及薄膜晶体管存储器及其制造方法，从底部到顶部使用基板作为栅电极的存储器包括电荷阻挡层，电荷存储层，电荷隧道层，器件的有源区和 源/漏电极。 电荷阻挡层是ALD生长的Al 2 O 3膜。 电荷存储层是由ALD法生长的第一层金属纳米晶体，绝缘层和第二层金属纳米晶体的两层金属纳米晶体。 从下到上。 电荷隧道层是包括生长的SiO 2 / HfO 2 / SiO 2或Al 2 O 3 / HfO 2 / Al 2 O 3膜的对称堆叠层。 通过ALD方法从下到上依次。 器件的有源区是通过RF溅射法生长的IGZO膜，并且通过标准光刻和湿蚀刻法形成。 本发明的TFT存储器具有P / E窗口大，数据保持性好，P / E速度高，阈值电压稳定，制造工艺简单的优点。