Invention Grant
- Patent Title: Semiconductor device structures and methods of forming semiconductor structures
- Patent Title (中): 半导体器件结构和形成半导体结构的方法
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Application No.: US14048923Application Date: 2013-10-08
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Publication No.: US08933458B2Publication Date: 2015-01-13
- Inventor: Justin K. Brask , Jack Kavalieros , Brian S. Doyle , Uday Shah , Suman Datta , Amlan Majumdar , Robert S. Chau
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/76 ; H01L29/04 ; H01L21/306 ; H01L21/84 ; H01L29/66 ; H01L29/78 ; H01L29/786
Abstract:
A method of patterning a semiconductor film is described. According to an embodiment of the present invention, a hard mask material is formed on a silicon film having a global crystal orientation wherein the semiconductor film has a first crystal plane and second crystal plane, wherein the first crystal plane is denser than the second crystal plane and wherein the hard mask is formed on the second crystal plane. Next, the hard mask and semiconductor film are patterned into a hard mask covered semiconductor structure. The hard mask covered semiconductor structured is then exposed to a wet etch process which has sufficient chemical strength to etch the second crystal plane but insufficient chemical strength to etch the first crystal plane.
Public/Granted literature
- US20140035009A1 SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF FORMING SEMICONDUCTOR STRUCTURES Public/Granted day:2014-02-06
Information query
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