Invention Grant
US08934289B2 Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction
有权
基于纳米线磁隧道结中的电流诱导畴壁运动的多位非易失性存储器
- Patent Title: Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction
- Patent Title (中): 基于纳米线磁隧道结中的电流诱导畴壁运动的多位非易失性存储器
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Application No.: US13689934Application Date: 2012-11-30
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Publication No.: US08934289B2Publication Date: 2015-01-13
- Inventor: Anthony J. Annunziata , Michael C. Gaidis , William Gallagher , Luc Thomas
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; B82Y99/00
Abstract:
A mechanism is provided for storing multiple bits in a domain wall nanowire magnetic junction device. The multiple bits are encoded based on a resistance of the domain wall nanowire magnetic junction device using a single domain wall. The single domain wall is shifted to change the resistance of the domain wall nanowire magnetic junction device to encode a selected bit. The resistance is checked to ensure that it corresponds to a preselected resistance for the selected bit. Responsive to the resistance corresponding to the preselected resistance for the selected bit, he selected bit is stored. Responsive to the resistance not being the preselected resistance for the selected bit, the single domain wall is shifted until the resistance corresponds to the preselected resistance.
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