发明授权
- 专利标题: Method of manufacturing porous insulating film
- 专利标题(中): 多孔绝缘膜的制造方法
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申请号: US13363638申请日: 2012-02-01
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公开(公告)号: US08937023B2公开(公告)日: 2015-01-20
- 发明人: Fuminori Ito , Yoshihiro Hayashi
- 申请人: Fuminori Ito , Yoshihiro Hayashi
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Young & Thompson
- 优先权: JP2008-294090 20081118
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L21/316 ; C23C16/40 ; C23C18/12 ; C23C18/14 ; H01L21/02
摘要:
A method includes forming an insulating film over a substrate by introducing a cyclic siloxane compound having a cyclic siloxane as a skeleton and having at least one volatile hydrocarbon group bonded to a side chain, and a silicon-containing compound into a plasma, and converting the insulating film to a porous insulating film by adding energy to the insulating film. The silicon-containing compound is decomposed using less energy as compared with the skeleton of the cyclic siloxane compound, the volatile hydrocarbon group, and the bond between the cyclic siloxane compound and the volatile hydrocarbon group.
公开/授权文献
- US20120135611A1 METHOD OF MANUFACTURING POROUS INSULATING FILM 公开/授权日:2012-05-31
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