Invention Grant
- Patent Title: Method for fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14294152Application Date: 2014-06-03
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Publication No.: US08940600B2Publication Date: 2015-01-27
- Inventor: Chun-Wei Hsu , Po-Cheng Huang , Ren-Peng Huang , Jie-Ning Yang , Chia-Lin Hsu , Teng-Chun Tsai , Chih-Hsun Lin , Chang-Hung Kung , Yen-Ming Chen , Yu-Ting Li
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L27/06
- IPC: H01L27/06
Abstract:
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the resistor region of the substrate; forming a tank in the STI; and forming a resistor in the tank and on two sides of the top surface of the STI outside the tank.
Public/Granted literature
- US20140273371A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2014-09-18
Information query
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