发明授权
- 专利标题： Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer
- 专利标题（中）： 使用中间成核层制造在金刚石衬底上具有氮化镓外延层的半导体器件的方法
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申请号： US13608902申请日： 2012-09-10
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公开(公告)号： US08945966B2公开(公告)日： 2015-02-03
- 发明人: Daniel Francis , Felix Ejeckam , John Wasserbauer , Dubravko Babic
- 申请人： Daniel Francis , Felix Ejeckam , John Wasserbauer , Dubravko Babic
- 申请人地址： US CA Santa Clara
- 专利权人： Element Six Technologies US Corporation
- 当前专利权人： Element Six Technologies US Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Bryan Cave LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/336 ; H01L21/04 ; H01L21/02 ; H01L23/373 ; C30B7/00
摘要：
Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
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