公开(公告)号：US20240219232A1

公开(公告)日：2024-07-04

申请号：US18335269

申请日：2023-06-15

Applicant: Jacov Tutavac ,  Dubravko Babic

Inventor： Jacov Tutavac ,  Dubravko Babic

IPC: G01J3/02 ,  B64G1/66 ,  G01J3/06 ,  G01J3/12 ,  G01J3/42

CPC classification number: G01J3/0294 ,  B64G1/66 ,  G01J3/0208 ,  G01J3/0275 ,  G01J3/06 ,  G01J3/12 ,  G01J3/42 ,  G01J2003/066 ,  G01J2003/1213

Abstract: A light detection module has N optical channels, each with an optical filter, a detector, and an amplifier; and an N×1 switch with N input ports each connected to one corresponding output port of each channel to receive an amplified detector output corresponding to a filtered optical intensity incident on that detector. The switch cycles between channels, connecting each amplified detector output in turn to the output port. An ADC samples a time dependent optical intensity signal from the switch, generating a corresponding ADC digital signal output. A microcontroller, connected to the N×1 switch and the ADC, controls acquisition by the ADC to provide a digital voltage data stream from each channel; making the average optical intensity value characterizing the voltage data stream available from each channel at a digital output port of the microcontroller, as N data values, characterizing the light incident on the N channels of the module.

公开(公告)号：US09614622B2

公开(公告)日：2017-04-04

申请号：US14860968

申请日：2015-09-22

Applicant: Dubravko Babic ,  Tin Komljenovic ,  Zvonimir Sipus

Inventor： Dubravko Babic ,  Tin Komljenovic ,  Zvonimir Sipus

IPC: H04B10/04 ,  H04B10/548 ,  H01S5/04 ,  G02B6/00 ,  H04B10/2587 ,  H04B10/272 ,  G02B6/293 ,  G02F1/09 ,  H04J14/02 ,  H01S5/065 ,  G02B6/12 ,  G02F1/01

CPC classification number: H04B10/548 ,  G02B6/00 ,  G02B6/12009 ,  G02B6/29347 ,  G02F1/09 ,  G02F2001/0139 ,  H01S5/041 ,  H01S5/0656 ,  H04B10/2587 ,  H04B10/272 ,  H04J14/0265

Abstract: A fiber-optic transmitter comprises a transmitter optical port, an optical circulator, a semiconductor optical amplifier, and a two-port modulation-averaging structure. The optical circulator has at least three ports, a first one of the three circulator ports being optically coupled to the transmitter optical port. The semiconductor optical amplifier has an input optical port, an output optical port, and an electrical input port. The two-port modulation-averaging structure is optically coupled between the input optical port and a third one of the three circulator ports.

公开(公告)号：US20160036531A1

公开(公告)日：2016-02-04

申请号：US14860968

申请日：2015-09-22

Applicant: Dubravko Babic ,  Tin Komljenovic ,  Zvonimir Sipus

Inventor： Dubravko Babic ,  Tin Komljenovic ,  Zvonimir Sipus

IPC: H04B10/548 ,  H04J14/02

CPC classification number: H04B10/548 ,  G02B6/00 ,  G02B6/12009 ,  G02B6/29347 ,  G02F1/09 ,  G02F2001/0139 ,  H01S5/041 ,  H01S5/0656 ,  H04B10/2587 ,  H04B10/272 ,  H04J14/0265

Abstract: A fiber-optic transmitter comprises a transmitter optical port, an optical circulator, a semiconductor optical amplifier, and a two-port modulation-averaging structure. The optical circulator has at least three ports, a first one of the three circulator ports being optically coupled to the transmitter optical port. The semiconductor optical amplifier has an input optical port, an output optical port, and an electrical input port. The two-port modulation-averaging structure is optically coupled between the input optical port and a third one of the three circulator ports.

Abstract translation: 光纤发射机包括发射机光端口，光环行器，半导体光放大器和双端口调制平均结构。 光循环器具有至少三个端口，三个循环器端口中的第一个光学耦合到发射器光学端口。 半导体光放大器具有输入光端口，输出光端口和电输入端口。 双端口调制平均结构光耦合在输入光端口和三个循环器端口中的第三个端口之间。

公开(公告)号：US08283672B2

公开(公告)日：2012-10-09

申请号：US12484098

申请日：2009-06-12

Applicant: Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

Inventor： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

IPC: H01L31/0264 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L21/0405 ,  C30B7/005 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02527 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

Abstract translation: 公开了将宽间隙半导体与合成金刚石基底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。 所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。 金刚石衬底用作散热器或机械衬底。

公开(公告)号：US20090093137A1

公开(公告)日：2009-04-09

申请号：US12208310

申请日：2008-09-10

Applicant: Avner Badehi ,  Sylvie Rockman ,  Oded Globerman ,  Dubravko Babic

Inventor： Avner Badehi ,  Sylvie Rockman ,  Oded Globerman ,  Dubravko Babic

IPC: H01R12/00

CPC classification number: G02B6/4201 ,  G02B6/4284 ,  H05K1/117 ,  H05K1/181 ,  H05K2201/09954 ,  H05K2201/10121 ,  H05K2201/10189 ,  H05K2201/10446

Abstract: A communications adaptor card is disclosed herein. One embodiment of the communications adaptor card comprises, a printed-circuit board, the printed circuit board having at least one keep-out area, the at least one keep-out area configured to accept a multi-contact electrical connector receptacle and at least one optical module attached to the printed circuit board. The at least one optical module can be attached to the printed circuit board substantially within the at-least-one keep-out area.

Abstract translation: 本文公开了通信适配器卡。 通信适配器卡的一个实施例包括印刷电路板，印刷电路板具有至少一个保留区域，所述至少一个保留区域被配置为接受多接触电连接器插座和至少一个 光学模块连接到印刷电路板。 至少一个光学模块可以基本上在至少一个保留区域内附接到印刷电路板。

公开(公告)号：US20080296586A1

公开(公告)日：2008-12-04

申请号：US12018131

申请日：2008-01-22

Applicant: Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Firooz Faili ,  Dubravko Babic

Inventor： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Firooz Faili ,  Dubravko Babic

IPC: H01L29/12 ,  B32B9/00

CPC classification number: G01T1/24 ,  H01L21/02389 ,  H01L21/02444 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02587 ,  H01L21/02664 ,  H01L21/76254 ,  H01L27/14694 ,  H01L33/0079 ,  Y10T428/30

Abstract: Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.

Abstract translation: 公开了以合成金刚石晶片原子连接的薄的高质量半导体膜制造复合晶片的方法。 合成金刚石基底是通过将合成金刚石沉积到沉积在体半导体晶片上的成核层上而制成的，所述成核层已准备好允许将薄半导体膜与剩余的体半导体晶片分离。 剩下的半导体晶片可以重新使用。 合成金刚石基底用作散热器和机械基板。

公开(公告)号：US09628175B2

公开(公告)日：2017-04-18

申请号：US14809210

申请日：2015-07-25

Applicant: Marko Sprem ,  Dubravko Babic

Inventor： Marko Sprem ,  Dubravko Babic

IPC: H04B17/00 ,  H04B10/079 ,  H04B10/071 ,  H04J14/02

CPC classification number: H04B10/503 ,  H04B10/2504 ,  H04B10/506 ,  H04B10/572 ,  H04J14/02

Abstract: This application discloses apparatuses and methods for selecting and tuning of a select mode of a multi-longitudinal mode device seeded or wavelength locked to a spectrum-sliced external wavelength by either self-seeding or broadband light-source seeding through an array-waveguide grating.

公开(公告)号：US08283189B2

公开(公告)日：2012-10-09

申请号：US12569486

申请日：2009-09-29

Applicant: Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

Inventor： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

IPC: H01L21/00

CPC classification number: H01L21/0405 ,  C30B7/005 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02527 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

Abstract translation: 公开了将宽间隙半导体与合成金刚石基底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。 所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。 金刚石衬底用作散热器或机械衬底。

公开(公告)号：US20100105166A1

公开(公告)日：2010-04-29

申请号：US12569486

申请日：2009-09-29

Applicant: Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

Inventor： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

IPC: H01L21/04

CPC classification number: H01L21/0405 ,  C30B7/005 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02527 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

Abstract translation: 公开了将宽间隙半导体与合成金刚石基底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。 所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。 金刚石衬底用作散热器或机械衬底。

公开(公告)号：US6117699A

公开(公告)日：2000-09-12

申请号：US58532

申请日：1998-04-10

Applicant: Brian E. Lemoff ,  Dubravko Babic ,  Richard P. Schneider

Inventor： Brian E. Lemoff ,  Dubravko Babic ,  Richard P. Schneider

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/40 ,  H01S5/42 ,  H01L21/00

CPC classification number: H01S5/423 ,  H01S5/18358 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/4087

Abstract: An array of n-wavelength vertical cavity surface emitting lasers (VCSELs) can be grown with precise and repeatable wavelength control. First, a foundation VCSEL structure is grown on a substrate. Next, n-paired layers of AlGaAs and InGaP are grown, where n is the desired number of different wavelengths. Next, one of the n regions is masked and etched. The steps of masking and etching are repeated until all n regions are etched. Finally, the upper VCSEL structure is grown.

Abstract translation: 可以用精确和可重复的波长控制来生长n波长垂直腔表面发射激光器阵列（VCSEL）。 首先，在衬底上生长基底VCSEL结构。 接下来，生长AlGaAs和InGaP的n对层，其中n是期望数量的不同波长。 接下来，掩模和蚀刻n个区域中的一个。 重复掩模和蚀刻的步骤直到蚀刻所有n个区域。 最后，生成上层VCSEL结构。