公开(公告)号：US09359693B2

公开(公告)日：2016-06-07

申请号：US13781054

申请日：2013-02-28

申请人： Element Six Technologies US Corporation

发明人： Daniel Francis ,  Firooz Faili ,  Kristopher Matthews ,  Frank Yantis Lowe ,  Quentin Diduck ,  Sergey Zaytsev ,  Felix Ejeckam

IPC分类号： C30B25/16 ,  C30B25/10 ,  C30B25/18 ,  C30B25/20 ,  C30B29/04 ,  H01L21/02 ,  C23C16/27 ,  C23C16/46 ,  H01L29/20 ,  H01L29/778 ,  H01L21/18

CPC分类号： C30B25/16 ,  C23C16/271 ,  C23C16/463 ,  C30B25/10 ,  C30B25/18 ,  C30B25/183 ,  C30B25/205 ,  C30B29/04 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02527 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/187 ,  H01L29/2003 ,  H01L29/7786

摘要： A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

摘要翻译： 公开了一种用于将宽间隙半导体，特别是氮化镓外延层与合成金刚石衬底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓的层状结构上的成核层上而形成金刚石基底。 公开了用于制造具有低弓形和高结晶质量的GaN-金刚石晶片的方法以及针对特定应用定制的用于制造在金刚石GaN晶片和芯片上的优选选择。

公开(公告)号：US08759134B2

公开(公告)日：2014-06-24

申请号：US14163681

申请日：2014-01-24

申请人： Element Six Technologies US Corporation

发明人： Felix Ejeckam ,  Daniel Francis ,  Quentin Diduck ,  Firooz Nasser-Faili ,  Dubravko Babić

IPC分类号： H01L29/20 ,  H01L23/36

CPC分类号： H01L21/0254 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02376 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0262 ,  H01L21/76838 ,  H01L21/78 ,  H01L23/3732 ,  H01L24/32 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/00

摘要： Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

公开(公告)号：US20140141595A1

公开(公告)日：2014-05-22

申请号：US14163681

申请日：2014-01-24

申请人： ELEMENT SIX TECHNOLOGIES US CORPORATION

发明人： Dubravko Babic ,  Firooz Nasser-Faili ,  Daniel Francis ,  Quentin Diduck ,  Felix Ejeckam

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L21/78

CPC分类号： H01L21/0254 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02376 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0262 ,  H01L21/76838 ,  H01L21/78 ,  H01L23/3732 ,  H01L24/32 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/00

摘要： Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

摘要翻译： 公开了用于集成宽间隙半导体，特别是用合成金刚石衬底的氮化镓外延层的方法。 金刚石基底通过将合成金刚石沉积到沉积或形成在包含由氮化镓制成的至少一层的分层结构上的成核层而产生。 公开了用于制造具有低弓形和高结晶质量的GaN-金刚石晶片的方法以及针对特定应用定制的用于制造在金刚石GaN晶片和芯片上的优选选择。

公开(公告)号：US08796843B1

公开(公告)日：2014-08-05

申请号：US12855274

申请日：2010-08-12

申请人： Dubravko I. Babic ,  Quentin E. Diduck ,  Alex Schreiber

发明人： Dubravko I. Babic ,  Quentin E. Diduck ,  Alex Schreiber

IPC分类号： H01L23/48 ,  H01L23/34

CPC分类号： H01L24/17 ,  H01L23/047 ,  H01L23/3675 ,  H01L23/40 ,  H01L23/4006 ,  H01L23/4824 ,  H01L23/49844 ,  H01L23/4985 ,  H01L23/49866 ,  H01L23/544 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L2023/4062 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/10165 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17517 ,  H01L2224/291 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/8114 ,  H01L2224/81191 ,  H01L2924/10155 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/0665 ,  H01L2924/014

摘要： High-power and high-frequency semiconductor devices require high signal integrity and high thermal conductance assembly technologies and packages. In particular, wide-gap-semiconductor devices on diamond benefit from spatially separate electrical and thermal connections. This application discloses assembly and package architectures that offer high signal integrity and high thermal conductance.

摘要翻译： 大功率和高频半导体器件需要高信号完整性和高导热组装技术和封装。 特别地，金刚石上的宽间隙半导体器件从空间上分离的电和热连接中获益。 本申请公开了提供高信号完整性和高导热性的组装和封装体系结构。

公开(公告)号：US08674405B1

公开(公告)日：2014-03-18

申请号：US13407588

申请日：2012-02-28

申请人： Dubravko Babić ,  Firooz Faili ,  Daniel Francis ,  Quentin Diduck ,  Felix Ejeckam

发明人： Dubravko Babić ,  Firooz Faili ,  Daniel Francis ,  Quentin Diduck ,  Felix Ejeckam

IPC分类号： H01L29/20 ,  H01L23/532

CPC分类号： H01L21/0254 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02376 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0262 ,  H01L21/76838 ,  H01L21/78 ,  H01L23/3732 ,  H01L24/32 ,  H01L29/1602 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/00

摘要： Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

摘要翻译： 公开了用于集成宽间隙半导体，特别是用合成金刚石衬底的氮化镓外延层的方法。 金刚石基底通过将合成金刚石沉积到沉积或形成在包含由氮化镓制成的至少一层的分层结构上的成核层而产生。 公开了用于制造具有低弓形和高结晶质量的GaN-金刚石晶片的方法以及针对特定应用定制的用于制造在金刚石GaN晶片和芯片上的优选选择。

公开(公告)号：US20210054526A1

公开(公告)日：2021-02-25

申请号：US16065526

申请日：2016-12-06

申请人： ELEMENT SIX TECHNOLOGIES LIMITED ,  ELEMENT SIX TECHNOLOGIES US CORPORATION

发明人： Wilbur LEW ,  Gregory BRUCE ,  Andrew Mark EDMONDS ,  Matthew Lee MARKHAM ,  Alastair Douglas STACEY ,  Harpreet Kaur DHILLON

IPC分类号： C30B29/04 ,  C30B25/02 ,  C30B33/04

摘要： A single crystal diamond material comprising: neutral nitrogen-vacancy defects (NV0); negatively charged nitrogen-vacancy defects (NV−); and single substitutional nitrogen defects (Ns) which transfer their charge to the neutral nitrogen-vacancy defects (NV0) to convert them into the negatively charged nitrogen-vacancy defects (NV), characterized in that the single crystal diamond material has a magnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by (I) where R is a ratio of concentrations of negatively charged nitrogen-vacancy defects to neutral nitrogen-vacancy defects ([NV−]/[NV0]), [NV−] is the concentration of negatively charged nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, [NV0] is a concentration of neutral nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, and T2′ is a decoherence time of the NV− defects, where T2′ is T2* for DC magnetometry or T2 for AC magnetometry.

公开(公告)号：US08945966B2

公开(公告)日：2015-02-03

申请号：US13608902

申请日：2012-09-10

申请人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

发明人： Daniel Francis ,  Felix Ejeckam ,  John Wasserbauer ,  Dubravko Babic

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L21/04 ,  H01L21/02 ,  H01L23/373 ,  C30B7/00

CPC分类号： H01L21/0405 ,  C30B7/005 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02527 ,  H01L23/3732 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.

摘要翻译： 公开了将宽间隙半导体与合成金刚石基底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。 所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。 金刚石衬底用作散热器或机械衬底。