发明授权
US08946023B2 Method of making a vertical NAND device using sequential etching of multilayer stacks
有权
使用多层堆叠的顺序蚀刻制造垂直NAND器件的方法
- 专利标题： Method of making a vertical NAND device using sequential etching of multilayer stacks
- 专利标题（中）： 使用多层堆叠的顺序蚀刻制造垂直NAND器件的方法
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申请号： US13933743申请日： 2013-07-02
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公开(公告)号： US08946023B2公开(公告)日： 2015-02-03
- 发明人: Raghuveer S. Makala , Yao-Sheng Lee , Jayavel Pachamuthu , Johann Alsmeier , Henry Chien
- 申请人： SanDisk Technologies, Inc.
- 申请人地址： US TX Plano
- 专利权人： SanDisk Technologies Inc.
- 当前专利权人： SanDisk Technologies Inc.
- 当前专利权人地址： US TX Plano
- 代理机构： The Marbury Law Group PLLC
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L27/115 ; H01L21/822 ; H01L27/06 ; H01L29/788 ; H01L29/792 ; H01L29/66
摘要：
A method of making a vertical NAND device includes forming a lower portion of a memory stack over a substrate, forming a lower portion of memory openings in the lower portion of the memory stack, and at least partially filling the lower portion of the memory openings with a sacrificial material. The method also includes forming an upper portion of the memory stack over the lower portion of the memory stack and over the sacrificial material, forming an upper portion of the memory openings in the upper portion of the memory stack to expose the sacrificial material in the lower portion of the memory openings, removing the sacrificial material to connect the lower portion of the memory openings with a respective upper portion of the memory openings to form continuous memory openings, and forming a semiconductor channel in each continuous memory opening.
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