Invention Grant
- Patent Title: Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure
- Patent Title (中): 多层半导体缓冲结构，半导体器件及使用多层半导体缓冲结构制造半导体器件的方法
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Application No.: US13835704Application Date: 2013-03-15
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Publication No.: US08946773B2Publication Date: 2015-02-03
- Inventor: Young-jo Tak , Jae-kyun Kim , Joo-sung Kim , Jun-youn Kim , Jae-won Lee , Hyo-ji Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0087350 20120809
- Main IPC: H01L29/267
- IPC: H01L29/267 ; H01L21/02 ; H01L29/20
Abstract:
A semiconductor buffer structure may include a silicon substrate and a buffer layer that is formed on the silicon substrate. The buffer layer may include a first layer, a second layer formed on the first layer, and a third layer formed on the second layer. The first layer may include AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) and have a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer may include AlxInyGa1-x-yN (0≦x
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