发明授权
- 专利标题： Electronic device and method of manufacturing the same, and semiconductor device and method of manufacturing the same
- 专利标题（中）： 电子器件及其制造方法以及半导体器件及其制造方法
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申请号： US13212605申请日： 2011-08-18
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公开(公告)号： US08952359B2公开(公告)日： 2015-02-10
- 发明人: Toshio Fukuda , Noriyuki Kawashima
- 申请人： Toshio Fukuda , Noriyuki Kawashima
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Dentons US LLP
- 优先权： JP2010-188103 20100825
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L35/24 ; H01L51/00 ; H01L51/05 ; H01L51/10
摘要：
Disclosed herein is an electronic device, including: (A) a control electrode; (B) a first electrode and a second electrode; and (C) an active layer composed of an organic semiconductor material layer provided between the first electrode and the second electrode so as to face the control electrode through an insulating layer, wherein a portion of the insulating layer contacting at least the active layer is composed of a layer obtained by curing a material expressed by the general structural formula (1), (2) or (3):
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