Invention Grant
US08952401B2 Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer
有权
半导体发光器件，晶片，以及氮化物半导体晶体层的制造方法
- Patent Title: Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer
- Patent Title (中): 半导体发光器件，晶片，以及氮化物半导体晶体层的制造方法
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Application No.: US13220059Application Date: 2011-08-29
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Publication No.: US08952401B2Publication Date: 2015-02-10
- Inventor: Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
- Applicant: Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-109784 20110516
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/02 ; H01L33/20 ; H01L33/44 ; H01L33/08 ; H01L33/40 ; H01L33/42
Abstract:
According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.
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