公开(公告)号：US08952401B2

公开(公告)日：2015-02-10

申请号：US13220059

申请日：2011-08-29

申请人： Naoharu Sugiyama ,  Taisuke Sato ,  Hiroshi Ono ,  Satoshi Mitsugi ,  Tomonari Shioda ,  Jongil Hwang ,  Hung Hung ,  Shinya Nunoue

发明人： Naoharu Sugiyama ,  Taisuke Sato ,  Hiroshi Ono ,  Satoshi Mitsugi ,  Tomonari Shioda ,  Jongil Hwang ,  Hung Hung ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L21/02 ,  H01L33/20 ,  H01L33/44 ,  H01L33/08 ,  H01L33/40 ,  H01L33/42

CPC分类号： H01L33/58 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/08 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/36 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。 第一半导体层具有与第一主表面相对的第一主表面和第二主表面。 发光层具有设置在第二主表面上的有源层。 第二半导体层设置在发光层上。 低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。

公开(公告)号：US20120292649A1

公开(公告)日：2012-11-22

申请号：US13220059

申请日：2011-08-29

申请人： Naoharu Sugiyama ,  Taisuke Sato ,  Hiroshi Ono ,  Satoshi Mitsugi ,  Tomonari Shioda ,  Jongil Hwang ,  Hung Hung ,  Shinya Nunoue

发明人： Naoharu Sugiyama ,  Taisuke Sato ,  Hiroshi Ono ,  Satoshi Mitsugi ,  Tomonari Shioda ,  Jongil Hwang ,  Hung Hung ,  Shinya Nunoue

IPC分类号： H01L33/22 ,  H01L29/00 ,  H01L21/20

CPC分类号： H01L33/58 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/08 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32 ,  H01L33/36 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。 第一半导体层具有与第一主表面相对的第一主表面和第二主表面。 发光层具有设置在第二主表面上的有源层。 第二半导体层设置在发光层上。 低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。

公开(公告)号：US20120292632A1

公开(公告)日：2012-11-22

申请号：US13222561

申请日：2011-08-31

申请人： Tomonari SHIODA ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Tomonari SHIODA ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/32 ,  H01L21/20 ,  H01L29/20

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.

摘要翻译： 根据一个实施例，氮化物半导体器件包括基底层和功能层。 基底层形成在形成在硅衬底上的含Al氮化物半导体层上。 基础层的厚度不小于1微米，包括GaN。 功能层设置在基础层上。 功能层包括第一半导体层。 第一半导体层的杂质浓度高于基础层中的杂质浓度，并且包括第一导电类型的GaN。

公开(公告)号：US08525194B2

公开(公告)日：2013-09-03

申请号：US13222561

申请日：2011-08-31

申请人： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/201 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.

公开(公告)号：US08692287B2

公开(公告)日：2014-04-08

申请号：US13222200

申请日：2011-08-31

申请人： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02584 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a nitride semiconductor device includes: a stacked foundation layer, and a functional layer. The stacked foundation layer is formed on an AlN buffer layer formed on a silicon substrate. The stacked foundation layer includes AlN foundation layers and GaN foundation layers being alternately stacked. The functional layer includes a low-concentration part, and a high-concentration part provided on the low-concentration part. A substrate-side GaN foundation layer closest to the silicon substrate among the plurality of GaN foundation layers includes first and second portions, and a third portion provided between the first and second portions. The third portion has a Si concentration not less than 5×1018 cm−3 and has a thickness smaller than a sum of those of the first and second portions.

摘要翻译： 根据一个实施例，氮化物半导体器件包括：堆叠的基底层和功能层。 堆叠的基底层形成在形成在硅衬底上的AlN缓冲层上。 堆叠的基础层包括AlN基底层和GaN基底层交替堆叠。 功能层包括低浓度部分和设置在低浓度部分上的高浓度部分。 多个GaN基底层中最靠近硅衬底的衬底侧GaN基底层包括第一和第二部分，以及设置在第一和第二部分之间的第三部分。 第三部分的Si浓度不小于5×1018cm-3，其厚度小于第一和第二部分的总和。

公开(公告)号：US20120292593A1

公开(公告)日：2012-11-22

申请号：US13222200

申请日：2011-08-31

申请人： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Tomonari Shioda ,  Hung Hung ,  Jongil Hwang ,  Taisuke Sato ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/04 ,  H01L21/20 ,  H01L29/201

CPC分类号： H01L33/32 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02584 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a nitride semiconductor device includes: a stacked foundation layer, and a functional layer. The stacked foundation layer is formed on an AlN buffer layer formed on a silicon substrate. The stacked foundation layer includes AlN foundation layers and GaN foundation layers being alternately stacked. The functional layer includes a low-concentration part, and a high-concentration part provided on the low-concentration part. A substrate-side GaN foundation layer closest to the silicon substrate among the plurality of GaN foundation layers includes first and second portions, and a third portion provided between the first and second portions. The third portion has a Si concentration not less than 5×1018 cm−3 and has a thickness smaller than a sum of those of the first and second portions.

摘要翻译： 根据一个实施例，氮化物半导体器件包括：堆叠的基底层和功能层。 堆叠的基底层形成在形成在硅衬底上的AlN缓冲层上。 堆叠的基础层包括AlN基底层和GaN基底层交替堆叠。 功能层包括低浓度部分和设置在低浓度部分上的高浓度部分。 多个GaN基底层中最靠近硅衬底的衬底侧GaN基底层包括第一和第二部分，以及设置在第一和第二部分之间的第三部分。 第三部分的Si浓度不小于5×1018cm-3，其厚度小于第一和第二部分的总和。

公开(公告)号：US09065003B2

公开(公告)日：2015-06-23

申请号：US13405509

申请日：2012-02-27

申请人： Hisashi Yoshida ,  Koichi Tachibana ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Jongil Hwang ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hisashi Yoshida ,  Koichi Tachibana ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Jongil Hwang ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/02

CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层， 发出峰值波长为440纳米以上的光。 对第一半导体层施加拉伸应变。 第一半导体层的边缘位错密度为5×10 9 / cm 2以下。 第一半导体层和发光层之间的晶格失配因子为0.11％以下。

公开(公告)号：US20120292592A1

公开(公告)日：2012-11-22

申请号：US13218909

申请日：2011-08-26

申请人： Jongil HWANG ,  Tomonari Shioda ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Jongil HWANG ,  Tomonari Shioda ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/04 ,  H01L33/26

CPC分类号： H01L33/32 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/325

摘要： According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga1-z1Inz1N (0

摘要翻译： 根据一个实施例，半导体发光器件包括：第一和第二半导体层，发光部分和含In层。 第一半导体层通过基底层形成在硅衬底上。 发光部分设置在第一半导体层上，并且包括阻挡层和设置在包括Ga1-z1Inz1N（0

公开(公告)号：US08928000B2

公开(公告)日：2015-01-06

申请号：US13405903

申请日：2012-02-27

申请人： Hung Hung ,  Tomonari Shioda ,  Jongil Hwang ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hung Hung ,  Tomonari Shioda ,  Jongil Hwang ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/15 ,  H01L21/02 ,  C30B23/02 ,  H01L31/10 ,  C30B25/18 ,  H01L33/04 ,  H01L29/778 ,  H01L29/812 ,  H01L33/12 ,  C30B29/40 ,  H01L29/20 ,  H01L33/00

CPC分类号： H01L33/04 ,  C30B23/02 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/778 ,  H01L29/7787 ,  H01L29/812 ,  H01L31/10 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×1018 cm−3 or more and less than 1×1021 cm−3. The first upper layer has a lattice constant larger than or equal to that of the first doped layer and larger than that of the first lower layer.

摘要翻译： 根据一个实施例，氮化物半导体晶片包括硅衬底，设置在硅衬底上的下部应变弛豫层，设置在下部应变弛豫层上的中间层，设置在中间层上的上部应变弛豫层和功能性 层设置在上部应变松弛层上。 中间层包括第一下层，设置在第一下层上的第一掺杂层和设置在第一掺杂层上的第一上层。 第一掺杂层的晶格常数大于或等于第一下层的晶格常数，并且含有1×1018cm-3以上且小于1×1021cm-3的杂质。 第一上层具有大于或等于第一掺杂层的晶格常数，并且大于第一下层的晶格常数。

公开(公告)号：US08809101B2

公开(公告)日：2014-08-19

申请号：US13218909

申请日：2011-08-26

申请人： Jongil Hwang ,  Tomonari Shioda ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Jongil Hwang ,  Tomonari Shioda ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/325

摘要： According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga1−z1Inz1N (0

摘要翻译： 根据一个实施例，半导体发光器件包括：第一和第二半导体层，发光部分和含In层。 第一半导体层通过基底层形成在硅衬底上。 发光部分设置在第一半导体层上，并且包括阻挡层和设置在包括Ga1-z1Inz1N（0