Invention Grant
US08952541B2 Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes
有权
使用保形沉积和热生长工艺制造金属 - 绝缘体 - 半导体隧穿触点的方法
- Patent Title: Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes
- Patent Title (中): 使用保形沉积和热生长工艺制造金属 - 绝缘体 - 半导体隧穿触点的方法
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Application No.: US13352062Application Date: 2012-01-17
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Publication No.: US08952541B2Publication Date: 2015-02-10
- Inventor: Niloy Mukherjee , Gilbert Dewey , Matthew V. Metz , Jack Kavalieros , Robert S. Chau
- Applicant: Niloy Mukherjee , Gilbert Dewey , Matthew V. Metz , Jack Kavalieros , Robert S. Chau
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L29/08 ; H01L23/485 ; H01L29/66 ; H01L29/45 ; H01L29/417 ; H01L21/8234 ; H01L29/78 ; H01L21/285 ; H01L29/51
Abstract:
A contact may be fabricated by a method including depositing a dielectric layer on a substrate having a transistor, etching a first opening in the dielectric layer that extends to a source region, forming an insulator on the source region, forming a contact metal on the insulator, the insulator separating the contact metal from the source region, and filling substantially all of the first opening, wherein the contact metal remains separated from the source region after the first opening is filled.
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