发明授权
US08952541B2 Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes
有权
使用保形沉积和热生长工艺制造金属 - 绝缘体 - 半导体隧穿触点的方法
- 专利标题： Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes
- 专利标题（中）： 使用保形沉积和热生长工艺制造金属 - 绝缘体 - 半导体隧穿触点的方法
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申请号： US13352062申请日： 2012-01-17
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公开(公告)号： US08952541B2公开(公告)日： 2015-02-10
- 发明人: Niloy Mukherjee , Gilbert Dewey , Matthew V. Metz , Jack Kavalieros , Robert S. Chau
- 申请人： Niloy Mukherjee , Gilbert Dewey , Matthew V. Metz , Jack Kavalieros , Robert S. Chau
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Winkle, PLLC
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L29/08 ; H01L23/485 ; H01L29/66 ; H01L29/45 ; H01L29/417 ; H01L21/8234 ; H01L29/78 ; H01L21/285 ; H01L29/51
摘要：
A contact may be fabricated by a method including depositing a dielectric layer on a substrate having a transistor, etching a first opening in the dielectric layer that extends to a source region, forming an insulator on the source region, forming a contact metal on the insulator, the insulator separating the contact metal from the source region, and filling substantially all of the first opening, wherein the contact metal remains separated from the source region after the first opening is filled.
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