Invention Grant
US08952543B2 Via connection structures, semiconductor devices having the same, and methods of fabricating the structures and devices
有权
通过连接结构，具有相同的半导体器件，以及制造结构和器件的方法
- Patent Title: Via connection structures, semiconductor devices having the same, and methods of fabricating the structures and devices
- Patent Title (中): 通过连接结构，具有相同的半导体器件，以及制造结构和器件的方法
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Application No.: US13718580Application Date: 2012-12-18
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Publication No.: US08952543B2Publication Date: 2015-02-10
- Inventor: Ho-Jin Lee , Pil-Kyu Kang , Kyu-Ha Lee , Byung-Lyul Park , Hyun-Soo Chung , Gil-Heyun Choi
- Applicant: Ho-Jin Lee , Pil-Kyu Kang , Kyu-Ha Lee , Byung-Lyul Park , Hyun-Soo Chung , Gil-Heyun Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/00
Abstract:
A semiconductor device including a lower layer, an insulating layer on a first side of the lower layer, an interconnection structure in the insulating layer, a via structure in the lower layer. The via structure protrudes into the insulating layer and the interconnection structure.
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