公开(公告)号：US08952543B2

公开(公告)日：2015-02-10

申请号：US13718580

申请日：2012-12-18

申请人： Ho-Jin Lee ,  Pil-Kyu Kang ,  Kyu-Ha Lee ,  Byung-Lyul Park ,  Hyun-Soo Chung ,  Gil-Heyun Choi

发明人： Ho-Jin Lee ,  Pil-Kyu Kang ,  Kyu-Ha Lee ,  Byung-Lyul Park ,  Hyun-Soo Chung ,  Gil-Heyun Choi

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L23/00

CPC分类号： H01L23/481 ,  H01L21/76898 ,  H01L23/525 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05024 ,  H01L2224/05027 ,  H01L2224/05568 ,  H01L2224/06181 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor device including a lower layer, an insulating layer on a first side of the lower layer, an interconnection structure in the insulating layer, a via structure in the lower layer. The via structure protrudes into the insulating layer and the interconnection structure.

摘要翻译： 一种半导体器件，包括下层，在下层的第一侧上的绝缘层，绝缘层中的互连结构，下层中的通孔结构。 通孔结构突出到绝缘层和互连结构中。

公开(公告)号：US20080230912A1

公开(公告)日：2008-09-25

申请号：US12053478

申请日：2008-03-21

申请人： In-Young Lee ,  Ho-Jin Lee ,  Hyun-Soo Chung ,  Ju-Il Choi ,  Son-Kwan Hwang

发明人： In-Young Lee ,  Ho-Jin Lee ,  Hyun-Soo Chung ,  Ju-Il Choi ,  Son-Kwan Hwang

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/76898 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/11462 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01055 ,  H01L2924/0106 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2224/05552

摘要： A method of manufacturing a semiconductor device includes forming an integrated circuit region on a semiconductor wafer. A first metal layer pattern is formed over the integrated circuit region. A via hole is formed to extend through the first metal layer pattern and the integrated circuit region. A final metal layer pattern is formed over the first metal layer pattern and within the via hole. A plug is formed within the via hole. Thereafter, a passivation layer is formed to overlie the final metal layer pattern.

摘要翻译： 一种制造半导体器件的方法包括在半导体晶片上形成集成电路区域。 在集成电路区域上形成第一金属层图案。 通孔形成为延伸穿过第一金属层图案和集成电路区域。 最终的金属层图案形成在第一金属层图案之上并且在通孔内。 在通孔内形成插头。 此后，形成钝化层以覆盖最终金属层图案。

公开(公告)号：US20070152349A1

公开(公告)日：2007-07-05

申请号：US11355545

申请日：2006-02-15

申请人： Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

发明人： Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

IPC分类号： H01L21/00 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13025 ,  H01L2224/274 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01079 ,  H01L2924/01087

摘要： In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.

摘要翻译： 在具有应力消除间隔物的半导体器件封装及其制造方法中，从芯片本体延伸的金属互连指状物提供芯片互连。 金属手指通过应力消除间隔物与芯片的主体隔离。 在一个示例中，这种隔离采取气隙的形式。 在另一个实例中，这种隔离采用弹性体材料的形式。 在这两种情况下，都避免了金属互连指和芯体之间的热膨胀系数的不匹配，从而减轻了与开裂和分层相关的问题，从而提高了器件的产量和器件的可靠性。

公开(公告)号：US20120261821A1

公开(公告)日：2012-10-18

申请号：US13537953

申请日：2012-06-29

申请人： Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

发明人： Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

IPC分类号： H01L23/488

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13025 ,  H01L2224/274 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01079 ,  H01L2924/01087

摘要： In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.

公开(公告)号：US07897511B2

公开(公告)日：2011-03-01

申请号：US12053478

申请日：2008-03-21

申请人： In-Young Lee ,  Ho-Jin Lee ,  Hyun-Soo Chung ,  Ju-Il Choi ,  Son-Kwan Hwang

发明人： In-Young Lee ,  Ho-Jin Lee ,  Hyun-Soo Chung ,  Ju-Il Choi ,  Son-Kwan Hwang

IPC分类号： H01L21/44

CPC分类号： H01L21/76898 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/11462 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01055 ,  H01L2924/0106 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2224/05552

摘要： A method of manufacturing a semiconductor device includes forming an integrated circuit region on a semiconductor wafer. A first metal layer pattern is formed over the integrated circuit region. A via hole is formed to extend through the first metal layer pattern and the integrated circuit region. A final metal layer pattern is formed over the first metal layer pattern and within the via hole. A plug is formed within the via hole. Thereafter, a passivation layer is formed to overlie the final metal layer pattern.

摘要翻译： 一种制造半导体器件的方法包括在半导体晶片上形成集成电路区域。 在集成电路区域上形成第一金属层图案。 通孔形成为延伸穿过第一金属层图案和集成电路区域。 最终的金属层图案形成在第一金属层图案之上并且在通孔内。 在通孔内形成插头。 此后，形成钝化层以覆盖最终金属层图案。

公开(公告)号：US07838992B2

公开(公告)日：2010-11-23

申请号：US12496176

申请日：2009-07-01

申请人： Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

发明人： Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

IPC分类号： H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13025 ,  H01L2224/274 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01079 ,  H01L2924/01087

摘要： In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.

摘要翻译： 在具有应力消除间隔物的半导体器件封装及其制造方法中，从芯片本体延伸的金属互连指状物提供芯片互连。 金属手指通过应力消除间隔物与芯片的主体隔离。 在一个示例中，这种隔离采取气隙的形式。 在另一个实例中，这种隔离采用弹性体材料的形式。 在这两种情况下，都避免了金属互连指和芯体之间的热膨胀系数的不匹配，从而减轻了与开裂和分层相关的问题，从而提高了器件的产量和器件的可靠性。

公开(公告)号：US07572673B2

公开(公告)日：2009-08-11

申请号：US11355545

申请日：2006-02-15

申请人： Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

发明人： Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13025 ,  H01L2224/274 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01079 ,  H01L2924/01087

摘要： In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.

摘要翻译： 在具有应力消除间隔物的半导体器件封装及其制造方法中，从芯片本体延伸的金属互连指状物提供芯片互连。 金属手指通过应力消除间隔物与芯片的主体隔离。 在一个示例中，这种隔离采取气隙的形式。 在另一个实例中，这种隔离采用弹性体材料的形式。 在这两种情况下，都避免了金属互连指和芯体之间的热膨胀系数的不匹配，从而减轻了与开裂和分层相关的问题，从而提高了器件的产量和器件的可靠性。

公开(公告)号：US08482129B2

公开(公告)日：2013-07-09

申请号：US13027594

申请日：2011-02-15

申请人： In-Young Lee ,  Ho-Jin Lee ,  Hyun-Soo Chung ,  Ju-Il Choi ,  Son-Kwan Hwang

发明人： In-Young Lee ,  Ho-Jin Lee ,  Hyun-Soo Chung ,  Ju-Il Choi ,  Son-Kwan Hwang

IPC分类号： H01L23/48

CPC分类号： H01L21/76898 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/11462 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01055 ,  H01L2924/0106 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2224/05552

摘要： A method of manufacturing a semiconductor device includes forming an integrated circuit region on a semiconductor wafer. A first metal layer pattern is formed over the integrated circuit region. A via hole is formed to extend through the first metal layer pattern and the integrated circuit region. A final metal layer pattern is formed over the first metal layer pattern and within the via hole. A plug is formed within the via hole. Thereafter, a passivation layer is formed to overlie the final metal layer pattern.

摘要翻译： 一种制造半导体器件的方法包括在半导体晶片上形成集成电路区域。 在集成电路区域上形成第一金属层图案。 通孔形成为延伸穿过第一金属层图案和集成电路区域。 最终的金属层图案形成在第一金属层图案之上并且在通孔内。 在通孔内形成插头。 此后，形成钝化层以覆盖最终金属层图案。

公开(公告)号：US08426252B2

公开(公告)日：2013-04-23

申请号：US13537953

申请日：2012-06-29

申请人： Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

发明人： Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13025 ,  H01L2224/274 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01079 ,  H01L2924/01087

摘要： In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.

公开(公告)号：US20120104608A1

公开(公告)日：2012-05-03

申请号：US13346191

申请日：2012-01-09

申请人： Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

发明人： Hyun-Soo Chung ,  Ho-Jin Lee ,  Dong-Hyun Jang ,  Dong-Ho Lee

IPC分类号： H01L25/07

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13025 ,  H01L2224/274 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01079 ,  H01L2924/01087

摘要： In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.

摘要翻译： 在具有应力消除间隔物的半导体器件封装及其制造方法中，从芯片本体延伸的金属互连指状物提供芯片互连。 金属手指通过应力消除间隔物与芯片的主体隔离。 在一个示例中，这种隔离采取气隙的形式。 在另一个实例中，这种隔离采用弹性体材料的形式。 在这两种情况下，都避免了金属互连指和芯体之间的热膨胀系数的不匹配，从而减轻了与开裂和分层相关的问题，从而提高了器件的产量和器件的可靠性。