Invention Grant
US08953385B2 Method of programming non-volatile memory device and apparatuses for performing the method
有权
用于执行该方法的非易失性存储器件和装置的编程方法
- Patent Title: Method of programming non-volatile memory device and apparatuses for performing the method
- Patent Title (中): 用于执行该方法的非易失性存储器件和装置的编程方法
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Application No.: US14071020Application Date: 2013-11-04
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Publication No.: US08953385B2Publication Date: 2015-02-10
- Inventor: Sang-Hyun Joo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0079881 20100818
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/10 ; G11C16/04 ; G11C7/00 ; G11C16/30 ; G11C11/56
Abstract:
A non-volatile memory device is provided. The non-volatile memory device includes a cell string including a plurality of non-volatile memory cells; and an operation control block configured to supply a program voltage to a word line connected to a selected non-volatile memory cell among the plurality of non-volatile memory cells during a program operation, configured to supply a first negative voltage to the word line during a detrapping operation, and configured to supply a second negative voltage as a verify voltage to the word line during a program verify operation.
Public/Granted literature
- US20140056078A1 METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE AND APPARATUSES FOR PERFORMING THE METHOD Public/Granted day:2014-02-27
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