Invention Grant
US08962476B2 Method of forming RDL wider than contact pad along first axis and narrower than contact pad along second axis
有权
沿着第一轴形成比接触垫更宽的RDL并沿着第二轴形成比接触垫更窄的方法
- Patent Title: Method of forming RDL wider than contact pad along first axis and narrower than contact pad along second axis
- Patent Title (中): 沿着第一轴形成比接触垫更宽的RDL并沿着第二轴形成比接触垫更窄的方法
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Application No.: US13893616Application Date: 2013-05-14
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Publication No.: US08962476B2Publication Date: 2015-02-24
- Inventor: Yaojian Lin , Xia Feng , Jianmin Feng , Kang Chen
- Applicant: STATS ChipPAC, Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltd.
- Current Assignee: STATS ChipPAC, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A semiconductor device has a semiconductor die and first conductive layer formed over a surface of the semiconductor die. A first insulating layer is formed over the surface of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. An opening is formed in the second insulating layer over the first conductive layer. A second conductive layer is formed in the opening over the first conductive layer and second insulating layer. The second conductive layer has a width that is less than a width of the first conductive layer along a first axis. The second conductive layer has a width that is greater than a width of the first conductive layer along a second axis perpendicular to the first axis. A third insulating layer is formed over the second conductive layer and first insulating layer.
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