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1.发明申请Semiconductor Device and Method of Forming RDL Wider than Contact Pad Along First Axis and Narrower than Contact Pad along Second Axis 有权半导体器件和形成RDL的宽度比接触焊盘沿着第一轴宽并且比沿着第二轴的接触焊盘更窄的方法公开(公告)号：US20130249111A1
公开(公告)日：2013-09-26
申请号：US13893616
申请日：2013-05-14
Applicant: STATS ChipPAC, Ltd.
Inventor： Yaojian Lin , Xia Feng , Jianmin Feng , Kang Chen
CPC classification number: H01L21/486 , H01L21/4857 , H01L21/561 , H01L23/3107 , H01L23/3114 , H01L23/3128 , H01L23/48 , H01L23/525 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L2224/0231 , H01L2224/02311 , H01L2224/02313 , H01L2224/02317 , H01L2224/0235 , H01L2224/02379 , H01L2224/0239 , H01L2224/024 , H01L2224/0401 , H01L2224/04042 , H01L2224/05548 , H01L2224/05552 , H01L2224/05553 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/06131 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/11849 , H01L2224/11901 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/29144 , H01L2224/2919 , H01L2224/48091 , H01L2224/48105 , H01L2224/48175 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L2924/00 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/381 , H05K2201/09854 , H01L2924/01014 , H01L2924/0665 , H01L2924/00014 , H01L2924/00012
Abstract: A semiconductor device has a semiconductor die and first conductive layer formed over a surface of the semiconductor die. A first insulating layer is formed over the surface of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. An opening is formed in the second insulating layer over the first conductive layer. A second conductive layer is formed in the opening over the first conductive layer and second insulating layer. The second conductive layer has a width that is less than a width of the first conductive layer along a first axis. The second conductive layer has a width that is greater than a width of the first conductive layer along a second axis perpendicular to the first axis. A third insulating layer is formed over the second conductive layer and first insulating layer.
Abstract translation: 半导体器件具有形成在半导体管芯的表面上的半导体管芯和第一导电层。 在半导体管芯的表面上形成第一绝缘层。 在第一绝缘层和第一导电层上形成第二绝缘层。 在第一导电层上的第二绝缘层中形成开口。 在第一导电层和第二绝缘层上的开口中形成第二导电层。 第二导电层的宽度小于沿着第一轴线的第一导电层的宽度。 第二导电层的宽度大于沿着垂直于第一轴线的第二轴线的第一导电层的宽度。 在第二导电层和第一绝缘层上形成第三绝缘层。
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2.发明授权Method of forming RDL wider than contact pad along first axis and narrower than contact pad along second axis 有权沿着第一轴形成比接触垫更宽的RDL并沿着第二轴形成比接触垫更窄的方法公开(公告)号：US08962476B2
公开(公告)日：2015-02-24
申请号：US13893616
申请日：2013-05-14
Applicant: STATS ChipPAC, Ltd.
Inventor： Yaojian Lin , Xia Feng , Jianmin Feng , Kang Chen
IPC: H01L21/31
CPC classification number: H01L21/486 , H01L21/4857 , H01L21/561 , H01L23/3107 , H01L23/3114 , H01L23/3128 , H01L23/48 , H01L23/525 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L2224/0231 , H01L2224/02311 , H01L2224/02313 , H01L2224/02317 , H01L2224/0235 , H01L2224/02379 , H01L2224/0239 , H01L2224/024 , H01L2224/0401 , H01L2224/04042 , H01L2224/05548 , H01L2224/05552 , H01L2224/05553 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/06131 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/11849 , H01L2224/11901 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/29144 , H01L2224/2919 , H01L2224/48091 , H01L2224/48105 , H01L2224/48175 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L2924/00 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/381 , H05K2201/09854 , H01L2924/01014 , H01L2924/0665 , H01L2924/00014 , H01L2924/00012
Abstract: A semiconductor device has a semiconductor die and first conductive layer formed over a surface of the semiconductor die. A first insulating layer is formed over the surface of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. An opening is formed in the second insulating layer over the first conductive layer. A second conductive layer is formed in the opening over the first conductive layer and second insulating layer. The second conductive layer has a width that is less than a width of the first conductive layer along a first axis. The second conductive layer has a width that is greater than a width of the first conductive layer along a second axis perpendicular to the first axis. A third insulating layer is formed over the second conductive layer and first insulating layer.
Abstract translation: 半导体器件具有形成在半导体管芯的表面上的半导体管芯和第一导电层。 在半导体管芯的表面上形成第一绝缘层。 在第一绝缘层和第一导电层上形成第二绝缘层。 在第一导电层上的第二绝缘层中形成开口。 在第一导电层和第二绝缘层上的开口中形成第二导电层。 第二导电层的宽度小于沿着第一轴线的第一导电层的宽度。 第二导电层的宽度大于沿着垂直于第一轴线的第二轴线的第一导电层的宽度。 在第二导电层和第一绝缘层上形成第三绝缘层。
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