Invention Grant
- Patent Title: Reusing active area mask for trench transfer exposure
- Patent Title (中): 重新使用有源区域掩模进行沟槽转移曝光
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Application No.: US13897890Application Date: 2013-05-20
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Publication No.: US08962485B2Publication Date: 2015-02-24
- Inventor: Mohamed Salama , Tuhin Guha Neogi , Scott Beasor
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/283
Abstract:
A method of silicide formation in a semiconductor fabrication process is disclosed. An active area (RX) mask is used to form an active silicon area, and is then reused to form a trench transfer (TT) area. A trench block (TB) mask is logically ANDed with the active area (RX) mask to form a trench silicide (TS) region.
Public/Granted literature
- US20140342556A1 REUSING ACTIVE AREA MASK FOR TRENCH TRANSFER EXPOSURE Public/Granted day:2014-11-20
Information query
IPC分类:
