Invention Grant
- Patent Title: Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same
- Patent Title (中): 具有扩散阻挡层的半导体器件及其制造方法
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Application No.: US14049570Application Date: 2013-10-09
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Publication No.: US08963227B2Publication Date: 2015-02-24
- Inventor: Ha-Jin Lim , Jin-Ho Do , Weon-Hong Kim , Moon-Kyun Song , Dae-Kwon Joo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2010-0074878 20100803
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; H01L21/28 ; H01L21/8238 ; H01L27/108 ; H01L29/49

Abstract:
Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region.
Public/Granted literature
- US20140035050A1 SEMICONDUCTOR DEVICES HAVING A DIFFUSION BARRIER LAYER AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2014-02-06
Information query
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