公开(公告)号：US08963227B2

公开(公告)日：2015-02-24

申请号：US14049570

申请日：2013-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-Jin Lim ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC: H01L29/76 ,  H01L29/78 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/108 ,  H01L29/49

CPC classification number: H01L29/78 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/10873 ,  H01L27/10894 ,  H01L29/4966

Abstract: Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region.

Abstract translation: 制造半导体器件的方法包括在被分成第一区域和第二区域的衬底上形成包括高k电介质材料的栅极绝缘层; 在所述第二区域中的所述栅极绝缘层的第二部分上形成包括第一金属的扩散阻挡层; 在所述栅绝缘层和所述扩散阻挡层上形成扩散层; 以及将所述扩散层的元素扩散到所述第一区域中的所述栅极绝缘层的第一部分中。

公开(公告)号：US20140035050A1

公开(公告)日：2014-02-06

申请号：US14049570

申请日：2013-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-Jin LIM ,  Jin-Ho Do ,  Weon-Hong Kim ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC: H01L29/78

CPC classification number: H01L29/78 ,  H01L21/28088 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/10873 ,  H01L27/10894 ,  H01L29/4966

Abstract: Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region.

Abstract translation: 制造半导体器件的方法包括在被分成第一区域和第二区域的衬底上形成包括高k电介质材料的栅极绝缘层; 在所述第二区域中的所述栅极绝缘层的第二部分上形成包括第一金属的扩散阻挡层; 在所述栅绝缘层和所述扩散阻挡层上形成扩散层; 以及将所述扩散层的元素扩散到所述第一区域中的所述栅极绝缘层的第一部分中。

公开(公告)号：US09023718B2

公开(公告)日：2015-05-05

申请号：US14165857

申请日：2014-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Ho Do ,  Ha-Jin Lim ,  Weon-Hong Kim ,  Hoi-Sung Chung ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51

CPC classification number: H01L21/02236 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02271 ,  H01L21/02532 ,  H01L21/28194 ,  H01L21/28211 ,  H01L29/51 ,  H01L29/513

Abstract: A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.

Abstract translation: 制造半导体器件的方法包括：在半导体衬底上形成外延层; 在所述外延层上形成具有第一厚度的覆盖层; 以及在氧气氛中氧化所述覆盖层以形成具有第二厚度的第一栅极介电层。

公开(公告)号：US20140141599A1

公开(公告)日：2014-05-22

申请号：US14165857

申请日：2014-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Ho Do ,  Ha-Jin Lim ,  Weon-Hong Kim ,  Hoi-Sung Chung ,  Moon-Kyun Song ,  Dae-Kwon Joo

IPC: H01L21/02

CPC classification number: H01L21/02236 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02271 ,  H01L21/02532 ,  H01L21/28194 ,  H01L21/28211 ,  H01L29/51 ,  H01L29/513

Abstract: A method of fabricating a semiconductor device includes: forming an epitaxial layer on a semiconductor substrate; forming a capping layer having a first thickness on the epitaxial layer; and oxidizing the capping layer in an oxygen atmosphere to form a first gate dielectric layer having a second thickness.

Abstract translation: 制造半导体器件的方法包括：在半导体衬底上形成外延层; 在所述外延层上形成具有第一厚度的覆盖层; 以及在氧气氛中氧化所述覆盖层以形成具有第二厚度的第一栅极介电层。