发明授权
- 专利标题： Circuit structures and electronic systems
- 专利标题（中）： 电路结构和电子系统
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申请号： US13401534申请日： 2012-02-21
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公开(公告)号： US08963330B2公开(公告)日： 2015-02-24
- 发明人: John Smythe
- 申请人： John Smythe
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/768 ; H01L21/288 ; H01L21/316 ; H01L21/3205
摘要：
The invention includes methods of forming layers conformally over undulating surface topographies associated with semiconductor substrates. The undulating surface topographies can first be exposed to one or more of titanium oxide, neodymium oxide, yttrium oxide, zirconium oxide and vanadium oxide to treat the surfaces, and can be subsequently exposed to a material that forms a layer conformally along the treated surfaces. The material can, for example, comprise an aluminum-containing compound and one or both of silane and silazane. The invention also includes semiconductor constructions having conformal layers formed over liners containing one or more of titanium oxide, yttrium oxide, zirconium oxide and vanadium oxide.
公开/授权文献
- US20120146222A1 Circuit Structures and Electronic Systems 公开/授权日：2012-06-14
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