发明授权
US08963517B2 Voltage regulator circuit comprising transistor which includes an oixide semiconductor
有权
包括晶体管的电压调节器电路包括氧化硅半导体
- 专利标题: Voltage regulator circuit comprising transistor which includes an oixide semiconductor
- 专利标题(中): 包括晶体管的电压调节器电路包括氧化硅半导体
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申请号: US12909556申请日: 2010-10-21
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公开(公告)号: US08963517B2公开(公告)日: 2015-02-24
- 发明人: Shunpei Yamazaki , Hiroyuki Miyake , Masashi Tsubuku , Kosei Noda
- 申请人: Shunpei Yamazaki , Hiroyuki Miyake , Masashi Tsubuku , Kosei Noda
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2009-242758 20091021; JP2010-012617 20100122
- 主分类号: G05F3/16
- IPC分类号: G05F3/16 ; G05F1/618 ; G05F1/00 ; H02M3/07
摘要:
A transistor includes a gate, a source, and a drain, the gate is electrically connected to the source or the drain, a first signal is input to one of the source and the drain, and an oxide semiconductor layer whose carrier concentration is 5×1014/cm3 or less is used for a channel formation layer. A capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a second signal which is a clock signal is input to the second electrode. A voltage of the first signal is stepped up or down to obtain a third signal which is output as an output signal through the other of the source and the drain of the transistor.
公开/授权文献
- US20110089927A1 VOLTAGE REGULATOR CIRCUIT 公开/授权日:2011-04-21
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