公开(公告)号：US08421069B2

公开(公告)日：2013-04-16

申请号：US12904579

申请日：2010-10-14

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/04 ,  H01L31/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L29/7869 ,  H01L21/84 ,  H01L23/552 ,  H01L23/60 ,  H01L23/66 ,  H01L25/16 ,  H01L27/0222 ,  H01L27/10873 ,  H01L27/12 ,  H01L27/1225 ,  H01L28/20 ,  H01L28/60 ,  H01L29/78609 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.

摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。 包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体 氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。 通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。

公开(公告)号：US20110089927A1

公开(公告)日：2011-04-21

申请号：US12909556

申请日：2010-10-21

申请人： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Masashi Tsubuku ,  Kosei Noda

发明人： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Masashi Tsubuku ,  Kosei Noda

IPC分类号： G05F3/08

CPC分类号： H01L29/78696 ,  H01L21/84 ,  H01L27/105 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H02M3/073 ,  H02M3/158

摘要： A transistor includes a gate, a source, and a drain, the gate is electrically connected to the source or the drain, a first signal is input to one of the source and the drain, and an oxide semiconductor layer whose carrier concentration is 5×1014/cm3 or less is used for a channel formation layer. A capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a second signal which is a clock signal is input to the second electrode. A voltage of the first signal is stepped up or down to obtain a third signal which is output as an output signal through the other of the source and the drain of the transistor.

摘要翻译： 晶体管包括栅极，源极和漏极，栅极电连接到源极或漏极，第一信号被输入到源极和漏极中的一个，以及载流子浓度为5× 1014 / cm3以下用于沟道形成层。 电容器包括第一电极和第二电极，第一电极电连接到晶体管的源极和漏极中的另一个，并且作为时钟信号的第二信号被输入到第二电极。 第一信号的电压被升高或降低以获得通过晶体管的源极和漏极中的另一个输出作为输出信号的第三信号。

公开(公告)号：US10061172B2

公开(公告)日：2018-08-28

申请号：US12904634

申请日：2010-10-14

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Masashi Tsubuku ,  Kosei Noda

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Masashi Tsubuku ,  Kosei Noda

IPC分类号： G09G3/36 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786

CPC分类号： G02F1/1368 ,  G09G3/3611 ,  G09G3/3648 ,  G09G3/3674 ,  G09G3/3677 ,  G09G5/18 ,  G09G2310/0286 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2330/022 ,  G09G2330/027 ,  H01L27/1225 ,  H01L29/7869

摘要： A liquid crystal display device includes: a driver circuit portion; a pixel portion; a signal generation circuit for generating a control signal for driving the driver circuit portion and an image signal which is supplied to the pixel portion; a memory circuit; a comparison circuit for detecting a difference of image signals for a series of frame periods among image signals stored for respective frame periods in the memory circuit; a selection circuit which selects and outputs the image signals for the series of frame periods when the difference is detected in the comparison circuit; and a display control circuit which supplies the control signal and the image signals output from the selection circuit, to the driver circuit portion when the difference is detected in the comparison circuit, and stops supplying the control signal to the driver circuit portion when the difference is not detected in the comparison circuit.

公开(公告)号：US08963517B2

公开(公告)日：2015-02-24

申请号：US12909556

申请日：2010-10-21

申请人： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Masashi Tsubuku ,  Kosei Noda

发明人： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Masashi Tsubuku ,  Kosei Noda

IPC分类号： G05F3/16 ,  G05F1/618 ,  G05F1/00 ,  H02M3/07

CPC分类号： H01L29/78696 ,  H01L21/84 ,  H01L27/105 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H02M3/073 ,  H02M3/158

摘要： A transistor includes a gate, a source, and a drain, the gate is electrically connected to the source or the drain, a first signal is input to one of the source and the drain, and an oxide semiconductor layer whose carrier concentration is 5×1014/cm3 or less is used for a channel formation layer. A capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a second signal which is a clock signal is input to the second electrode. A voltage of the first signal is stepped up or down to obtain a third signal which is output as an output signal through the other of the source and the drain of the transistor.

摘要翻译： 晶体管包括栅极，源极和漏极，栅极电连接到源极或漏极，第一信号被输入到源极和漏极中的一个，以及载流子浓度为5× 1014 / cm3以下用于沟道形成层。 电容器包括第一电极和第二电极，第一电极电连接到晶体管的源极和漏极中的另一个，并且作为时钟信号的第二信号被输入到第二电极。 第一信号的电压被升高或降低以获得通过晶体管的源极和漏极中的另一个输出作为输出信号的第三信号。

公开(公告)号：US20110101331A1

公开(公告)日：2011-05-05

申请号：US12904579

申请日：2010-10-14

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

IPC分类号： H01L29/78

CPC分类号： H01L29/7869 ,  H01L21/84 ,  H01L23/552 ,  H01L23/60 ,  H01L23/66 ,  H01L25/16 ,  H01L27/0222 ,  H01L27/10873 ,  H01L27/12 ,  H01L27/1225 ,  H01L28/20 ,  H01L28/60 ,  H01L29/78609 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.

摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的泄漏电流和寄生电容。 包括在LSI，CPU或存储器中的半导体集成电路使用使用氧化物半导体形成的晶体管来制造，所述氧化物半导体是通过从作为电子给体（供体）中除去作为电子给体（供体）的杂质而获得的内在或本质上的半导体 氧化物半导体，并且具有比硅半导体更大的能隙，并且形成在半导体衬底上。 通过形成在半导体衬底上的晶体管，并且包括具有充分降低的氢浓度的高度净化的氧化物半导体层，可以实现其由漏电流引起的功率消耗低的半导体器件。

公开(公告)号：US20110089414A1

公开(公告)日：2011-04-21

申请号：US12904565

申请日：2010-10-14

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

IPC分类号： H01L29/12

CPC分类号： H01L29/26 ,  G06K19/07758 ,  G11C7/00 ,  G11C19/28 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/0883 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2223/6677 ,  H02M3/07

摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的泄漏电流和寄生电容。 使用薄膜晶体管制造诸如LSI，CPU或存储器的半导体集成电路，其中使用氧化物半导体形成沟道形成区域，该氧化物半导体通过去除作为电子给体的杂质而成为本征或本质上的半导体 （供体），并且具有比硅半导体更大的能隙。 通过使用具有充分降低的氢浓度的高度净化的氧化物半导体层的薄膜晶体管，可以实现由于漏电流而具有低功耗的半导体器件。

公开(公告)号：US08421068B2

公开(公告)日：2013-04-16

申请号：US12904565

申请日：2010-10-14

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/04 ,  H01L31/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L29/26 ,  G06K19/07758 ,  G11C7/00 ,  G11C19/28 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/0883 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2223/6677 ,  H02M3/07

摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

摘要翻译： 目的是减少用于LSI，CPU或存储器的晶体管的漏电流和寄生电容。 使用薄膜晶体管制造诸如LSI，CPU或存储器的半导体集成电路，其中使用氧化物半导体形成沟道形成区域，该氧化物半导体通过去除作为电子给体的杂质而成为本征或本质上的半导体 （供体），并且具有比硅半导体更大的能隙。 通过使用具有充分降低的氢浓度的高度净化的氧化物半导体层的薄膜晶体管，可以实现由于漏电流而具有低功耗的半导体器件。

公开(公告)号：US20110090204A1

公开(公告)日：2011-04-21

申请号：US12904634

申请日：2010-10-14

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Masashi Tsubuku ,  Kosei Noda

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Masashi Tsubuku ,  Kosei Noda

IPC分类号： G09G3/36 ,  G06F3/038

CPC分类号： G02F1/1368 ,  G09G3/3611 ,  G09G3/3648 ,  G09G3/3674 ,  G09G3/3677 ,  G09G5/18 ,  G09G2310/0286 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2330/022 ,  G09G2330/027 ,  H01L27/1225 ,  H01L29/7869

摘要： A liquid crystal display device includes: a driver circuit portion; a pixel portion; a signal generation circuit for generating a control signal for driving the driver circuit portion and an image signal which is supplied to the pixel portion; a memory circuit; a comparison circuit for detecting a difference of image signals for a series of frame periods among image signals stored for respective frame periods in the memory circuit; a selection circuit which selects and outputs the image signals for the series of frame periods when the difference is detected in the comparison circuit; and a display control circuit which supplies the control signal and the image signals output from the selection circuit, to the driver circuit portion when the difference is detected in the comparison circuit, and stops supplying the control signal to the driver circuit portion when the difference is not detected in the comparison circuit.

摘要翻译： 液晶显示装置包括：驱动电路部分; 像素部分; 信号产生电路，用于产生用于驱动驱动电路部分的控制信号和提供给像素部分的图像信号; 存储电路; 比较电路，用于检测在存储电路中为各个帧周期存储的图像信号中的一系列帧周期的图像信号的差异; 选择电路，当在比较电路中检测到差异时，选择并输出用于一系列帧周期的图像信号; 以及显示控制电路，当在比较电路中检测到差异时，将从选择电路输出的控制信号和图像信号提供给驱动电路部分，并且当差值为 在比较电路中未检测到。

公开(公告)号：US08400187B2

公开(公告)日：2013-03-19

申请号：US12901057

申请日：2010-10-08

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

IPC分类号： H01L25/00 ,  H03K19/094 ,  H03B1/00

CPC分类号： H01L29/7869 ,  H01L22/34 ,  H01L27/0207 ,  H01L27/1225 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

摘要翻译： 逻辑电路包括具有使用氧化物半导体形成的沟道形成区域的薄膜晶体管，以及通过关闭薄膜晶体管而使端子中的一个成为浮置状态的电容器。 氧化物半导体的氢浓度为5×1019（原子/ cm3）以下，因此在不产生电场的状态下基本上用作绝缘体。 因此，可以减小薄膜晶体管的截止电流，从而通过薄膜晶体管抑制存储在电容器中的电荷的泄漏。 因此，可以防止逻辑电路的故障。 此外，可以通过减小薄膜晶体管的截止电流来降低在逻辑电路中流动的过量的电流，导致逻辑电路的低功耗。

公开(公告)号：US08803142B2

公开(公告)日：2014-08-12

申请号：US12907722

申请日：2010-10-19

申请人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kosei Noda ,  Kouhei Toyotaka ,  Kazunori Watanabe ,  Hikaru Harada

发明人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kosei Noda ,  Kouhei Toyotaka ,  Kazunori Watanabe ,  Hikaru Harada

IPC分类号： H01L29/04 ,  H01L29/12 ,  H01L29/78

CPC分类号： H01L29/7869 ,  G06F15/76 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1112 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696

摘要： An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

摘要翻译： 目的是提供一种存储器件，其包括可通过具有低截止电流的薄膜晶体管无故障地操作的存储元件。 提供了一种存储器件，其中包括至少一个包括氧化物半导体层的薄膜晶体管的存储元件被布置为矩阵。 包括氧化物半导体层的薄膜晶体管具有高场效应迁移率和低截止电流，因此可以有利地操作而没有问题。 此外，可以降低功耗。 由于存储器件和像素可以形成在一个衬底上，所以这种存储器件在包括氧化物半导体层的薄膜晶体管被设置在显示器件的像素中的情况下是特别有效的。