Invention Grant
- Patent Title: Phase shift masks and methods of forming phase shift masks
- Patent Title (中): 相移掩模和形成相移掩模的方法
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Application No.: US13719910Application Date: 2012-12-19
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Publication No.: US08968970B2Publication Date: 2015-03-03
- Inventor: Se-Gun Moon , Dong-Seok Nam , Hoon Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Ellsworth IP Group, PLLC
- Priority: KR10-2009-0096277 20091009
- Main IPC: G03F1/26
- IPC: G03F1/26

Abstract:
A phase shift mask having a first region and a second region in a transverse direction includes a transparent layer, a phase shift pattern disposed in the first region, a transmittance control layer pattern disposed in the second region, and a shading layer pattern disposed on the transmittance control layer pattern. The phase shift pattern has a first pattern including a transparent material and a second pattern including metal. The phase shift mask may prevent haze effects through a cleaning process using an alkaline cleaning solution.
Public/Granted literature
- US20140170534A1 PHASE SHIFT MASKS AND METHODS OF FORMING PHASE SHIFT MASKS Public/Granted day:2014-06-19
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