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1.发明公开公开(公告)号：US20230194567A1
公开(公告)日：2023-06-22
申请号：US17878414
申请日：2022-08-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwangeun Kim , Seungbum Hong , Sungyoon Ryu , Hoon Kim , Jiwon Yeom , Seokjung Yun , Souk Kim , Younghoon Sohn , Yusin Yang
CPC classification number: G01Q40/00 , H01L22/12 , G01Q70/10 , H01L27/10876
Abstract: A method of operating an atomic force microscope (AFM) is provided. The method includes inspecting a sample by using the AFM and inspecting a tip of a probe of the AFM by using a characterization sample. The characterization sample includes a first characterization pattern that includes a line and space pattern of a first height, a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height, and a third characterization pattern that includes a line and space pattern of a third height that is lower than the second height, and includes a rough surface.
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公开(公告)号：US20160152413A1
公开(公告)日：2016-06-02
申请号：US14927673
申请日：2015-10-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Min KIM , Tae-gon Kim , Hoon Kim , Hyun-joon Park , Seung-yong Oh , Hyun-hee Lee
IPC: B65G17/20
CPC classification number: B65G47/5122
Abstract: A conveyor apparatus is provided. The conveyor apparatus includes a rail formed in a closed curve line, a chain conveyor that moves along the rail, a driver that drives the chain conveyor, and a first and a second variable conveyors that relatively vary lengths of at least two portions of the chain conveyor so that a section of the chain conveyor remains in position while other portions of the chain conveyor moving along the rail.
Abstract translation: 提供输送装置。 传送装置包括形成在闭合曲线中的轨道，沿着轨道移动的链式输送机，驱动链式输送机的驱动器，以及相对变化链条的至少两部分长度的第一和第二可变输送机 输送机，使得链条输送机的一部分保持在适当位置，而链条输送机的其它部分沿着轨道移动。
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公开(公告)号：US11409193B2
公开(公告)日：2022-08-09
申请号：US17028049
申请日：2020-09-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Mankyu Kang , Hoon Kim , Jongkeun Oh , Minho Kim , Heebom Kim
Abstract: A reticle for an apparatus for EUV exposure and a method of manufacturing a reticle, the reticle including a substrate including an edge region and a main region; a multi-layer structure on the main region and the edge region, a sidewall of the multi-layer structure overlying the edge region; a capping layer covering an upper surface and the sidewall of the multi-layer structure and at least a portion of the edge region of the substrate; and an absorber layer on the capping layer, the absorber layer covering an entire upper surface of the capping layer on the edge region of the substrate, wherein a stacked structure of the capping layer and the absorber layer is on an upper surface of the edge region of the substrate, and a sidewall of the stacked structure of the capping layer and the absorber layer is perpendicular to an upper surface of the substrate.
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公开(公告)号：US11183233B2
公开(公告)日：2021-11-23
申请号：US16566002
申请日：2019-09-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Yeop Baeck , Tae-Hyung Kim , Daeyoung Moon , Dong-Wook Seo , Inhak Lee , Hyunsu Choi , Taejoong Song , Jae-Seung Choi , Jung-Myung Kang , Hoon Kim , Jisu Yu , Sun-Yung Jang
IPC: G11C11/419 , G11C7/08 , H01L23/528 , H01L27/092 , H01L27/11
Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.
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公开(公告)号：US09876651B2
公开(公告)日：2018-01-23
申请号：US14288608
申请日：2014-05-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong Seok Cho , Hoon Kim
CPC classification number: H04L12/2816 , G08C17/02 , G08C2201/40 , H04L12/6418 , H04W88/08
Abstract: A home network system has a home appliance, a portable terminal to receive a control command associated with the home appliance, and an access point to allow the home appliance or the portable terminal to be connected to a wide area network (WAN), wherein the access point notifies the home appliance of the connection of the portable terminal if the portable terminal connects to the access point, so that the home application detects that a user returns home and performs a certain operation as a user connects to the access point when returning home.
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Patent Agency Ranking
公开(公告)号：US09680981B2
公开(公告)日：2017-06-13
申请号：US14341016
申请日：2014-07-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Si Hyun Park , Talipov Elmurod , Dal Young Yu , Hoon Kim , Young Woon Kim , Jae Seok Lee , Jae Seung Choi
CPC classification number: H04M1/72533 , H04L12/282 , H04L12/2834 , H04L63/0492 , H04L63/08 , H04L63/18 , H04L2012/2841 , H04L2012/285 , H04M1/7253 , H04W4/20 , H04W4/80 , H04W4/90
Abstract: A control method of a home appliance, the method including retrieving information about a communication device, authenticating the communication device, registering the authenticated communication device, receiving voice data from the registered communication device, outputting a voice signal corresponding to the received voice data to a user, receiving the voice signal from the user, and transmitting voice data corresponding to the received voice signal to the communication device. When the method is used, even if a user loses a communication device in a home, call is possible using a home appliance such as refrigerator.
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公开(公告)号：US09395620B2
公开(公告)日：2016-07-19
申请号：US14338611
申请日：2014-07-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hoon Kim
CPC classification number: G03F1/64 , G03F1/22 , G03F1/62 , G03F7/70983
Abstract: A pellicle includes a first frame affixing a reticle, the first frame having a tapered locking groove, a second frame on the first frame, the second frame having a locking portion that is detachably combined with the tapered locking groove of the first frame, and a membrane affixed to the second frame.
Abstract translation: 防护薄膜组件包括固定标线的第一框架，第一框架具有锥形锁定槽，第一框架上的第二框架，第二框架具有可拆卸地与第一框架的锥形锁定槽组合的锁定部分， 膜固定在第二框架上。
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公开(公告)号：US20140170534A1
公开(公告)日：2014-06-19
申请号：US13719910
申请日：2012-12-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Se-Gun MOON , Dong-Seok Nam , Hoon Kim
IPC: G03F1/26
CPC classification number: G03F1/26
Abstract: A phase shift mask having a first region and a second region in a transverse direction includes a transparent layer, a phase shift pattern disposed in the first region, a transmittance control layer pattern disposed in the second region, and a shading layer pattern disposed on the transmittance control layer pattern. The phase shift pattern has a first pattern including a transparent material and a second pattern including metal. The phase shift mask may prevent haze effects through a cleaning process using an alkaline cleaning solution.
Abstract translation: 具有第一区域和第二区域的相移掩模包括透明层，设置在第一区域中的相移图案，设置在第二区域中的透射率控制层图案，以及设置在第二区域上的遮光层图案 透光控制层图案。 相移图案具有包括透明材料的第一图案和包括金属的第二图案。 相移掩模可以通过使用碱性清洁溶液的清洁过程来防止雾度效应。
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公开(公告)号：US11152058B2
公开(公告)日：2021-10-19
申请号：US16566002
申请日：2019-09-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Yeop Baeck , Tae-Hyung Kim , Daeyoung Moon , Dong-Wook Seo , Inhak Lee , Hyunsu Choi , Taejoong Song , Jae-Seung Choi , Jung-Myung Kang , Hoon Kim , Jisu Yu , Sun-Yung Jang
IPC: G11C11/419 , G11C7/08 , H01L23/528 , H01L27/092 , H01L27/11
Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.
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10.发明授权公开(公告)号：US10453521B2
公开(公告)日：2019-10-22
申请号：US15417807
申请日：2017-01-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Yeop Baeck , Tae-Hyung Kim , Daeyoung Moon , Dong-Wook Seo , Inhak Lee , Hyunsu Choi , Taejoong Song , Jae-Seung Choi , Jung-Myung Kang , Hoon Kim , Jisu Yu , Sun-Yung Jang
IPC: H01L27/11 , G11C11/419 , H01L23/528 , H01L27/092 , G11C7/08
Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.
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