Abstract:
Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.
Abstract:
A phase shift mask having a first region and a second region in a transverse direction includes a transparent layer, a phase shift pattern disposed in the first region, a transmittance control layer pattern disposed in the second region, and a shading layer pattern disposed on the transmittance control layer pattern. The phase shift pattern has a first pattern including a transparent material and a second pattern including metal. The phase shift mask may prevent haze effects through a cleaning process using an alkaline cleaning solution.
Abstract:
A phase shift mask having a first region and a second region in a transverse direction includes a transparent layer, a phase shift pattern disposed in the first region, a transmittance control layer pattern disposed in the second region, and a shading layer pattern disposed on the transmittance control layer pattern. The phase shift pattern has a first pattern including a transparent material and a second pattern including metal. The phase shift mask may prevent haze effects through a cleaning process using an alkaline cleaning solution.
Abstract:
An electron beam exposure apparatus may include a plurality of electron guns, a condenser lens, a position-adjusting unit and an aperture plate. The electron guns may emit electron beams to a substrate. The condenser lens may be arranged between the electron guns and the substrate to concentrate the electron beams. The position-adjusting unit may individually adjust positions of the electron guns to provide the concentrated electron beam with a uniform intensity. The aperture plate may be arranged between the substrate and the condenser lens. The aperture plate may have a plurality of apertures through which the concentrated electron beams are incident.
Abstract:
Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.