Halftone phase shift blank photomasks and halftone phase shift photomasks
    1.
    发明授权
    Halftone phase shift blank photomasks and halftone phase shift photomasks 有权
    半色调相移空白光掩模和半色调相移光掩模

    公开(公告)号:US08865375B2

    公开(公告)日:2014-10-21

    申请号:US13706978

    申请日:2012-12-06

    CPC classification number: G03F1/26 G03F1/32

    Abstract: Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.

    Abstract translation: 提供了半色调相移光掩模,其包括被配置为透射光的基板; 基板上的移动图案,包括基板的中心部分上的图案区域和设置在基板的周边上的盲区的移动图案,盲区的移位图案的厚度大于基板的厚度 图案区域,并且被配置为部分地透射光; 以及遮光图案,其形成在所述遮光区域中的所述移动图案上,并且被构造成屏蔽所述光。 本文还提供了相关方法。

    PHASE SHIFT MASKS AND METHODS OF FORMING PHASE SHIFT MASKS
    2.
    发明申请
    PHASE SHIFT MASKS AND METHODS OF FORMING PHASE SHIFT MASKS 有权
    相移片掩模和形成相移片的方法

    公开(公告)号:US20140170534A1

    公开(公告)日:2014-06-19

    申请号:US13719910

    申请日:2012-12-19

    CPC classification number: G03F1/26

    Abstract: A phase shift mask having a first region and a second region in a transverse direction includes a transparent layer, a phase shift pattern disposed in the first region, a transmittance control layer pattern disposed in the second region, and a shading layer pattern disposed on the transmittance control layer pattern. The phase shift pattern has a first pattern including a transparent material and a second pattern including metal. The phase shift mask may prevent haze effects through a cleaning process using an alkaline cleaning solution.

    Abstract translation: 具有第一区域和第二区域的相移掩模包括透明层,设置在第一区域中的相移图案,设置在第二区域中的透射率控制层图案,以及设置在第二区域上的遮光层图案 透光控制层图案。 相移图案具有包括透明材料的第一图案和包括金属的第二图案。 相移掩模可以通过使用碱性清洁溶液的清洁过程来防止雾度效应。

    Phase shift masks and methods of forming phase shift masks
    3.
    发明授权
    Phase shift masks and methods of forming phase shift masks 有权
    相移掩模和形成相移掩模的方法

    公开(公告)号:US08968970B2

    公开(公告)日:2015-03-03

    申请号:US13719910

    申请日:2012-12-19

    CPC classification number: G03F1/26

    Abstract: A phase shift mask having a first region and a second region in a transverse direction includes a transparent layer, a phase shift pattern disposed in the first region, a transmittance control layer pattern disposed in the second region, and a shading layer pattern disposed on the transmittance control layer pattern. The phase shift pattern has a first pattern including a transparent material and a second pattern including metal. The phase shift mask may prevent haze effects through a cleaning process using an alkaline cleaning solution.

    Abstract translation: 具有第一区域和第二区域的相移掩模包括透明层,设置在第一区域中的相移图案,设置在第二区域中的透射率控制层图案,以及设置在第二区域上的遮光层图案 透光控制层图案。 相移图案具有包括透明材料的第一图案和包括金属的第二图案。 相移掩模可以通过使用碱性清洁溶液的清洁过程来防止雾度效应。

    ELECTRON BEAM EXPOSURE APPARATUS
    4.
    发明申请
    ELECTRON BEAM EXPOSURE APPARATUS 审中-公开
    电子束曝光装置

    公开(公告)号:US20140145091A1

    公开(公告)日:2014-05-29

    申请号:US14085035

    申请日:2013-11-20

    Inventor: Dong-Seok Nam

    CPC classification number: H01J37/3177 H01J37/06 H01J37/1471

    Abstract: An electron beam exposure apparatus may include a plurality of electron guns, a condenser lens, a position-adjusting unit and an aperture plate. The electron guns may emit electron beams to a substrate. The condenser lens may be arranged between the electron guns and the substrate to concentrate the electron beams. The position-adjusting unit may individually adjust positions of the electron guns to provide the concentrated electron beam with a uniform intensity. The aperture plate may be arranged between the substrate and the condenser lens. The aperture plate may have a plurality of apertures through which the concentrated electron beams are incident.

    Abstract translation: 电子束曝光装置可以包括多个电子枪,聚光透镜,位置调节单元和孔板。 电子枪可以向衬底发射电子束。 聚光透镜可以布置在电子枪和基板之间以集中电子束。 位置调整单元可以分别调整电子枪的位置以提供具有均匀强度的浓缩电子束。 孔板可以布置在基板和聚光透镜之间。 孔板可以具有多个孔,集中的电子束通过该孔入射。

    Halftone Phase Shift Blank Photomasks and Halftone Phase Shift Photomasks
    5.
    发明申请
    Halftone Phase Shift Blank Photomasks and Halftone Phase Shift Photomasks 有权
    半色调相移空白光掩模和半色调相移光掩模

    公开(公告)号:US20130101926A1

    公开(公告)日:2013-04-25

    申请号:US13706978

    申请日:2012-12-06

    CPC classification number: G03F1/26 G03F1/32

    Abstract: Halftone phase shift photomasks are provided including a substrate configured to transmit light; a shift pattern on the substrate, the shift pattern including a pattern area on a center portion of the substrate and a blind area disposed on a periphery of the substrate, the shift pattern of the blind area having a greater thickness than a thickness that of the pattern area, and being configured to partially transmit the light; and a light shielding pattern formed on the shift pattern in the blind area and being configured to shield the light. Related methods are also provided herein.

    Abstract translation: 提供了半色调相移光掩模,其包括被配置为透射光的基板; 基板上的移动图案,包括基板的中心部分上的图案区域和设置在基板的周边上的盲区的移动图案,盲区的移位图案的厚度大于基板的厚度 图案区域,并且被配置为部分地透射光; 以及遮光图案,其形成在所述遮光区域中的所述移动图案上,并且被构造成屏蔽所述光。 本文还提供了相关方法。

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