Invention Grant
- Patent Title: Semiconductor devices including a resistor structure
- Patent Title (中): 包括电阻器结构的半导体器件
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Application No.: US14045034Application Date: 2013-10-03
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Publication No.: US08969971B2Publication Date: 2015-03-03
- Inventor: Junjie Xiong , Yoon-Hae Kim , Hong-Seong Kang , Yoon-Seok Lee , You-Shin Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2012-0145746 20121213
- Main IPC: H01L27/06
- IPC: H01L27/06
Abstract:
Semiconductor devices are provided. A semiconductor device may include a transistor area and a resistor area. The transistor area may include a gate structure. The resistor area may include an insulating layer and a resistor structure on the insulating layer. A top surface of the gate structure and a top surface of the resistor structure may be substantially coplanar.
Public/Granted literature
- US20140167180A1 SEMICONDUCTOR DEVICES INCLUDING A RESISTOR STRUCTURE Public/Granted day:2014-06-19
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