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Patent Agency Ranking
1.发明授权Semiconductor devices including a resistor structure and methods of forming the same 有权包括电阻结构的半导体器件及其形成方法公开(公告)号：US08981489B2
公开(公告)日：2015-03-17
申请号：US14102736
申请日：2013-12-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Junjie Xiong , Yoon-Hae Kim , Hong-Seong Kang , Yoon-Seok Lee , You-Shin Choi
IPC: H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L27/06 , H01L49/02
CPC classification number: H01L27/0629 , H01L28/20 , H01L28/24
Abstract: Semiconductor devices including a resistor structure is provided. The semiconductor device may include a gate structure on an active region, a resistor structure on a field region and a first interlayer insulating layer on the gate structure and the resistor structure. The semiconductor devices may also include a resistor trench plug vertically penetrating through the first interlayer insulating layer and contacting the resistor structure and a second interlayer insulating layer on the first interlayer insulating layer and the resistor trench plug. Further, the semiconductor devices may include a resistor contact plug vertically penetrating through the first and second interlayer insulating layers and contacting the resistor structure.
Abstract translation: 提供了包括电阻器结构的半导体器件。 半导体器件可以包括有源区上的栅极结构，场区上的电阻结构以及栅结构上的第一层间绝缘层和电阻结构。 半导体器件还可以包括垂直穿透第一层间绝缘层并且与第一层间绝缘层和电阻器沟槽插塞上的电阻器结构和第二层间绝缘层接触的电阻器沟槽插塞。 此外，半导体器件可以包括垂直穿过第一和第二层间绝缘层并接触电阻器结构的电阻器接触插塞。
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2.发明申请SEMICONDUCTOR DEVICES INCLUDING A RESISTOR STRUCTURE AND METHODS OF FORMING THE SAME 有权包括电阻结构的半导体器件及其形成方法公开(公告)号：US20140167181A1
公开(公告)日：2014-06-19
申请号：US14102736
申请日：2013-12-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Junjie Xiong , Yoon-Hae Kim , Hong-Seong Kang , Yoon-Seok Lee , You-Shin Choi
IPC: H01L27/06
CPC classification number: H01L27/0629 , H01L28/20 , H01L28/24
Abstract: Semiconductor devices including a resistor structure is provided. The semiconductor device may include a gate structure on an active region, a resistor structure on a field region and a first interlayer insulating layer on the gate structure and the resistor structure. The semiconductor devices may also include a resistor trench plug vertically penetrating through the first interlayer insulating layer and contacting the resistor structure and a second interlayer insulating layer on the first interlayer insulating layer and the resistor trench plug. Further, the semiconductor devices may include a resistor contact plug vertically penetrating through the first and second interlayer insulating layers and contacting the resistor structure.
Abstract translation: 提供了包括电阻器结构的半导体器件。 半导体器件可以包括有源区上的栅极结构，场区上的电阻结构以及栅结构上的第一层间绝缘层和电阻结构。 半导体器件还可以包括垂直穿透第一层间绝缘层并且与第一层间绝缘层和电阻器沟槽插塞上的电阻器结构和第二层间绝缘层接触的电阻器沟槽插塞。 此外，半导体器件可以包括垂直穿过第一和第二层间绝缘层并接触电阻器结构的电阻器接触插塞。
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公开(公告)号：US20140167180A1
公开(公告)日：2014-06-19
申请号：US14045034
申请日：2013-10-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Junjie Xiong , Yoon-Hae Kim , Hong-Seong Kang , Yoon-Seok Lee , You-Shin Choi
IPC: H01L27/06
CPC classification number: H01L27/0629 , Y10S257/90
Abstract: Semiconductor devices are provided. A semiconductor device may include a transistor area and a resistor area. The transistor area may include a gate structure. The resistor area may include an insulating layer and a resistor structure on the insulating layer. A top surface of the gate structure and a top surface of the resistor structure may be substantially coplanar.
Abstract translation: 提供半导体器件。 半导体器件可以包括晶体管区域和电阻器区域。 晶体管区域可以包括栅极结构。 电阻器区域可以在绝缘层上包括绝缘层和电阻器结构。 栅极结构的顶表面和电阻器结构的顶表面可以是基本上共面的。
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公开(公告)号：US08969971B2
公开(公告)日：2015-03-03
申请号：US14045034
申请日：2013-10-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Junjie Xiong , Yoon-Hae Kim , Hong-Seong Kang , Yoon-Seok Lee , You-Shin Choi
IPC: H01L27/06
CPC classification number: H01L27/0629 , Y10S257/90
Abstract: Semiconductor devices are provided. A semiconductor device may include a transistor area and a resistor area. The transistor area may include a gate structure. The resistor area may include an insulating layer and a resistor structure on the insulating layer. A top surface of the gate structure and a top surface of the resistor structure may be substantially coplanar.
Abstract translation: 提供半导体器件。 半导体器件可以包括晶体管区域和电阻器区域。 晶体管区域可以包括栅极结构。 电阻器区域可以在绝缘层上包括绝缘层和电阻器结构。 栅极结构的顶表面和电阻器结构的顶表面可以是基本上共面的。
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公开(公告)号：US20140017863A1
公开(公告)日：2014-01-16
申请号：US13918475
申请日：2013-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yoon-Seok Lee , Yoon-Hae Kim , Hong-Seong Kang , Sung-Ho Son , JunJie Xiong , You-Shin Choi
IPC: H01L29/66
CPC classification number: H01L29/66477 , H01L21/28518 , H01L21/76814 , H01L23/485 , H01L23/5226 , H01L23/5228 , H01L27/0629 , H01L27/1052 , H01L28/20 , H01L29/41783 , H01L29/517 , H01L29/665 , H01L29/66545 , H01L29/66628 , H01L29/66636 , H01L2924/0002 , H01L2924/00
Abstract: Methods of manufacturing a semiconductor device including metal gates are provided. The method may include forming a resistor pattern and a dummy gate electrode, which include polysilicon, and forming an impurity region adjacent to the dummy gate electrode. The method may further include replacing the dummy gate electrode with a gate electrode and then forming metal silicide patterns on the resistor pattern and the impurity region.
Abstract translation: 提供了制造包括金属栅极的半导体器件的方法。 该方法可以包括形成包括多晶硅的电阻器图案和虚拟栅极电极，并且形成与虚拟栅电极相邻的杂质区域。 该方法可以进一步包括用栅电极代替伪栅极电极，然后在电阻器图案和杂质区域上形成金属硅化物图案。
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