发明授权
- 专利标题: Stacked memory with interface providing offset interconnects
- 专利标题(中): 具有提供偏移互连的接口的堆叠存储器
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申请号: US13997148申请日: 2011-12-02
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公开(公告)号: US08971087B2公开(公告)日: 2015-03-03
- 发明人: Pete Vogt , Andre Schaefer , Warren Morrow , John Halbert , Jin Kim , Kenneth Shoemaker
- 申请人: Pete Vogt , Andre Schaefer , Warren Morrow , John Halbert , Jin Kim , Kenneth Shoemaker
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Blakely, Sokoloff, Taylor & Zafman LLP
- 国际申请: PCT/US2011/063191 WO 20111202
- 国际公布: WO2013/081634 WO 20130606
- 主分类号: G11C5/06
- IPC分类号: G11C5/06 ; H01L27/108 ; H01L25/065 ; H01L23/48 ; H01L23/00
摘要:
Dynamic operations for operations for a stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.