Invention Grant
- Patent Title: Sense amplifier circuit and semiconductor device
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Application No.: US13666177Application Date: 2012-11-01
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Publication No.: US08976612B2Publication Date: 2015-03-10
- Inventor: Kazuhiko Kajigaya , Soichiro Yoshida , Yasutoshi Yamada
- Applicant: Elpida Memory, Inc.
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-215045 20090916
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C7/00 ; G11C7/06 ; G11C11/4091 ; G11C5/14 ; G11C7/10

Abstract:
A single-ended sense amplifier circuit of the invention comprises first and second MOS transistors and first and second precharge circuits. The first MOS transistor drives the bit line to a predetermined voltage and switches connection between the bit line and a sense node and the second MOS transistor whose gate is connected to the sense node amplifies the signal via the first MOS transistor. The first precharge circuit precharges the bit line to a first potential and the second precharge circuit precharges the sense node to a second potential. Before sensing operation, the bit line is driven to the predetermined voltage when the above gate voltage is controlled to decrease. The predetermined voltage is appropriately set so that a required voltage difference at the sense node between high and low levels can be obtained near a changing point between charge transfer/distributing modes.
Public/Granted literature
- US20130301364A1 SENSE AMPLIFIER CIRUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2013-11-14
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