发明授权
- 专利标题： Method for manufacturing silicon carbide schottky barrier diode
- 专利标题（中）： 制造碳化硅肖特基势垒二极管的方法
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申请号： US13372931申请日： 2012-02-14
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公开(公告)号： US08980732B2公开(公告)日： 2015-03-17
- 发明人: Kyoung Kook Hong , Jong Seok Lee
- 申请人： Kyoung Kook Hong , Jong Seok Lee
- 申请人地址： KR Seoul
- 专利权人： Hyundai Motor Company
- 当前专利权人： Hyundai Motor Company
- 当前专利权人地址： KR Seoul
- 代理机构： Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- 代理商 Peter F. Corless
- 优先权： KR10-2011-0114977 20111107
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L27/082 ; H01L29/872 ; H01L29/66 ; H01L21/04 ; H01L29/16
摘要：
The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n− epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film is formed on the n− epitaxial layer by heat treatment, and then a portion where a composite oxide film is to be formed is exposed by etching. Nitrogen is implanted into the n− epitaxial layer and the sacrificial oxide film using nitrogen plasma. A silicon nitride is deposited on the n− epitaxial layer and the sacrificial oxide film. The silicon nitride is thermally oxidized to form a composite oxide film. An oxide film in a portion where a Schottky metal is to be deposited is etched, and then the Schottky metal is deposited, thereby forming a silicon carbide Schottky barrier diode.