公开(公告)号：US20160332812A1

公开(公告)日：2016-11-17

申请号：US15112777

申请日：2015-01-14

申请人： Yeong-Jong Kwon ,  Jong-Seok Lee ,  Seung-Won Shim

发明人： Yeong-Jong Kwon ,  Jong-Seok Lee ,  Seung-Won Shim

IPC分类号： B65D90/00 ,  B65D88/00 ,  B65G1/04

CPC分类号： B65D90/0073 ,  B65D88/005 ,  B65D90/0053 ,  B65G1/02 ,  B65G1/04

摘要： The present invention relates to a height-extensible container-type warehouse that is manufactured in a container type at a factory, can be transported to a desired place, and can be increased in height at the place by coupling a section, which exceeds a height limit under the Road Traffic Act and is separately manufactured, to an opening of the warehouse in order to increase the height thereof.

摘要翻译： 本发明涉及一种在出厂时以容器类型制造的高度可伸缩的容器式仓库，可以运送到所需的位置，并且可以通过将一个高度超过高度 道路交通法规限制，并单独制造，以提高仓库的高度。

公开(公告)号：US08980732B2

公开(公告)日：2015-03-17

申请号：US13372931

申请日：2012-02-14

申请人： Kyoung Kook Hong ,  Jong Seok Lee

发明人： Kyoung Kook Hong ,  Jong Seok Lee

IPC分类号： H01L21/02 ,  H01L27/082 ,  H01L29/872 ,  H01L29/66 ,  H01L21/04 ,  H01L29/16

CPC分类号： H01L29/872 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/6606

摘要： The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n− epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film is formed on the n− epitaxial layer by heat treatment, and then a portion where a composite oxide film is to be formed is exposed by etching. Nitrogen is implanted into the n− epitaxial layer and the sacrificial oxide film using nitrogen plasma. A silicon nitride is deposited on the n− epitaxial layer and the sacrificial oxide film. The silicon nitride is thermally oxidized to form a composite oxide film. An oxide film in a portion where a Schottky metal is to be deposited is etched, and then the Schottky metal is deposited, thereby forming a silicon carbide Schottky barrier diode.

摘要翻译： 本发明提供一种制造碳化硅肖特基势垒二极管的方法。 在该方法中，在n +衬底上沉积n-外延层。 通过热处理在n外延层上形成牺牲氧化膜，然后通过蚀刻暴露要形成复合氧化物膜的部分。 使用氮等离子体将氮注入到n外延层和牺牲氧化膜中。 氮化硅沉积在n外延层和牺牲氧化膜上。 氮化硅被热氧化以形成复合氧化膜。 对要沉积肖特金属的部分中的氧化膜进行蚀刻，然后沉积肖特基金属，从而形成碳化硅肖特基势垒二极管。

公开(公告)号：US08779439B2

公开(公告)日：2014-07-15

申请号：US13371702

申请日：2012-02-13

申请人： Kyoung Kook Hong ,  Jong Seok Lee

发明人： Kyoung Kook Hong ,  Jong Seok Lee

IPC分类号： H01L29/872

CPC分类号： H01L29/872 ,  H01L21/02529 ,  H01L21/26506 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/66143

摘要： The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n− epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n− epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n− epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.

摘要翻译： 本发明提供一种碳化硅肖特基势垒二极管器件及其制造方法。 碳化硅肖特基二极体装置包括初级n外延层，n +外延区和肖特基金属层。 主n外延层沉积在与欧姆金属层的下表面连接的n +衬底上。 通过将n +离子注入初级n外延层的中心区域来形成n +外延区域。 肖特基金属层沉积在n +外延层上。

公开(公告)号：US20130211678A1

公开(公告)日：2013-08-15

申请号：US13883037

申请日：2011-10-12

申请人： Jong-Seok Lee ,  Kyoung-Su Yi ,  Won-Gun Kim ,  Soung-Yong Joung

发明人： Jong-Seok Lee ,  Kyoung-Su Yi ,  Won-Gun Kim ,  Soung-Yong Joung

IPC分类号： B62D9/00 ,  B60W10/196 ,  B60W30/18 ,  B60W10/20

CPC分类号： B62D9/002 ,  B60L3/102 ,  B60L15/2036 ,  B60L2220/42 ,  B60L2220/46 ,  B60L2240/24 ,  B60L2240/463 ,  B60L2260/28 ,  B60W10/196 ,  B60W10/20 ,  B60W30/045 ,  B60W30/18145 ,  B60W2520/10 ,  B60W2520/403 ,  B60W2540/18 ,  B60W2600/00 ,  B60W2720/14 ,  Y02T10/645 ,  Y02T10/646 ,  Y02T10/72 ,  Y02T10/7275

摘要： A vehicle with independently driven multiple axles and a controller which independently drives the multiple axles are disclosed. The controller includes a first controller which determines a target control value including at least one of a mechanical steering angle of each of a plurality of wheels of a vehicle, a target yaw moment of the vehicle, a target longitudinal force of the vehicle, and a target wheel speed of each of the plurality of wheels, according to a driving condition of the vehicle, when the first controller receives an operation input including at least one of a steering input, an acceleration input and a braking input; and a second controller which determines wheel torques of the plurality of wheels, which drive the plurality of wheels independently, based on the target control value, wherein the wheel torques of the plurality of wheels are different from one another.

摘要翻译： 公开了具有独立驱动的多轴的车辆和独立地驱动多个车轴的控制器。 控制器包括：第一控制器，其确定目标控制值，该目标控制值包括车辆的多个车轮中的每一个的机械转向角，车辆的目标横摆力矩，车辆的目标纵向力和 当第一控制器接收到包括转向输入，加速度输入和制动输入中的至少一个的操作输入时，根据车辆的驱动条件，多个车轮中的每一个的目标车轮速度; 以及第二控制器，其基于所述目标控制值来确定所述多个车轮的车轮转矩，所述车轮转矩独立地驱动所述多个车轮，其中所述多个车轮的车轮转矩彼此不同。

公开(公告)号：US20130115758A1

公开(公告)日：2013-05-09

申请号：US13372931

申请日：2012-02-14

申请人： Kyoung Kook Hong ,  Jong Seok Lee

发明人： Kyoung Kook Hong ,  Jong Seok Lee

IPC分类号： H01L21/20

CPC分类号： H01L29/872 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/6606

摘要： The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n− epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film is formed on the n− epitaxial layer by heat treatment, and then a portion where a composite oxide film is to be formed is exposed by etching. Nitrogen is implanted into the n− epitaxial layer and the sacrificial oxide film using nitrogen plasma. A silicon nitride is deposited on the n− epitaxial layer and the sacrificial oxide film. The silicon nitride is thermally oxidized to form a composite oxide film. An oxide film in a portion where a Schottky metal is to be deposited is etched, and then the Schottky metal is deposited, thereby forming a silicon carbide Schottky barrier diode.

摘要翻译： 本发明提供一种制造碳化硅肖特基势垒二极管的方法。 在该方法中，在n +衬底上沉积n-外延层。 通过热处理在n外延层上形成牺牲氧化膜，然后通过蚀刻暴露要形成复合氧化物膜的部分。 使用氮等离子体将氮注入到n外延层和牺牲氧化膜中。 氮化硅沉积在n外延层和牺牲氧化膜上。 氮化硅被热氧化以形成复合氧化膜。 对要沉积肖特金属的部分中的氧化膜进行蚀刻，然后沉积肖特基金属，从而形成碳化硅肖特基势垒二极管。

公开(公告)号：US07637422B2

公开(公告)日：2009-12-29

申请号：US11475138

申请日：2006-06-27

申请人： Jae Hoon Kwak ,  Woo Ho Lee ,  Hee Chang Lee ,  Jae Hun Yi ,  In Gyu Roh ,  Jong Seok Lee

发明人： Jae Hoon Kwak ,  Woo Ho Lee ,  Hee Chang Lee ,  Jae Hun Yi ,  In Gyu Roh ,  Jong Seok Lee

IPC分类号： G06F17/60

CPC分类号： G07F19/202 ,  G07F19/20

摘要： A automated teller machine (ATM) verifies the authenticity of the cheque based on image information acquired by a CIS unit and magnetic character information acquired by a MICR unit. The ATM further includes a plural cheque leaves determining unit for determining the presence of plural cheque leaves using the image information, the magnetic character information, and thickness information of the cheque.

摘要翻译： 自动取款机（ATM）基于由CIS单元获取的图像信息和由MICR单元获取的磁性字符信息来验证支票的真实性。 ATM还包括多个检查叶决定单元，用于使用图像信息，磁性字符信息和检查的厚度信息来确定多个检查叶的存在。

公开(公告)号：US08593455B2

公开(公告)日：2013-11-26

申请号：US12345076

申请日：2008-12-29

申请人： Ho-Kyung Kim ,  Seung-Yong Lee ,  Jong-Seok Lee ,  Sung-Yul Choe

发明人： Ho-Kyung Kim ,  Seung-Yong Lee ,  Jong-Seok Lee ,  Sung-Yul Choe

IPC分类号： G06T15/00

CPC分类号： G06T9/001 ,  G06T9/004 ,  G06T9/20 ,  G06T17/20

摘要： A method and system to compress and decode mesh data with random accessibility in a three-dimensional mesh model, the system to compress mesh data with random accessibility in a three-dimensional mesh model including: a mesh data acquisition unit to acquire mesh data from a three-dimensional mesh model having a plurality of cells; a wire mesh generation unit to generate a wire mesh including a plurality of wire cells by using the mesh data, each wire cell including at least two cells of the plurality of cells; a data structure generation unit to generate wire mesh information on the wire mesh and wire cell data including mesh data of the respective wire cells; and an encoding unit to compress the generated wire mesh information and the generated wire cell data.

摘要翻译： 一种用于在三维网格模型中对具有随机可访问性的网格数据进行压缩和解码的方法和系统，所述系统在三维网格模型中压缩具有随机可访问性的网格数据，包括：网格数据获取单元，用于从 具有多个单元的三维网格模型; 线网产生单元，通过使用网格数据生成包括多个有线单元的线网，每个线单元包括所述多个单元中的至少两个单元; 一种数据结构生成单元，用于生成关于所述有线网格的有线网格信息和包括各个线单元的网格数据的有线单元数据; 以及编码单元，用于压缩生成的网格信息和生成的有线单元数据。

公开(公告)号：US20130126969A1

公开(公告)日：2013-05-23

申请号：US13406726

申请日：2012-02-28

申请人： Jong Seok Lee ,  Kyoung Kook Hong

发明人： Jong Seok Lee ,  Kyoung Kook Hong

IPC分类号： H01L29/78

CPC分类号： H01L29/0657 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7825

摘要： Disclosed is an LDMOS device, which is configured to reduce an electric field concentrated to a gate oxide film and lower an ON-resistance produced when the device conducts a forward action, and a method for manufacturing the same. More specifically, when an n-drift region is formed on a P-type substrate, a p-body is formed on the n-drift region through an epitaxial process, and then the p-body region is partially etched to form a plurality of p-epitaxial layers, so that when the device executes an action for blocking a reverse voltage, depletion layers are formed between the junction surfaces of the p-epitaxial layers and the n-drift region including the junction surfaces between the n-drift region and the p-body.

摘要翻译： 公开了一种LDMOS器件，其被配置为减少集中到栅极氧化物膜的电场并降低当器件进行正向动作时产生的导通电阻及其制造方法。 更具体地，当在P型衬底上形成n漂移区时，通过外延工艺在n漂移区上形成p体，然后部分蚀刻p体区以形成多个 使得当器件执行用于阻止反向电压的动作时，在p-外延层的连接表面和n漂移区之间形成耗尽层，该n-漂移区域包括n-漂移区和 p体。

公开(公告)号：US20130112991A1

公开(公告)日：2013-05-09

申请号：US13371702

申请日：2012-02-13

申请人： Kyoung Kook Hong ,  Jong Seok Lee

发明人： Kyoung Kook Hong ,  Jong Seok Lee

IPC分类号： H01L29/872 ,  H01L21/329

CPC分类号： H01L29/872 ,  H01L21/02529 ,  H01L21/26506 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/66143

摘要： The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n− epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n− epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n− epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.

摘要翻译： 本发明提供一种碳化硅肖特基势垒二极管器件及其制造方法。 碳化硅肖特基二极体装置包括初级n外延层，n +外延区和肖特基金属层。 主n外延层沉积在与欧姆金属层的下表面连接的n +衬底上。 通过将n +离子注入初级n外延层的中心区域来形成n +外延区域。 肖特基金属层沉积在n +外延层上。

公开(公告)号：US08674436B2

公开(公告)日：2014-03-18

申请号：US13406726

申请日：2012-02-28

申请人： Jong Seok Lee ,  Kyoung Kook Hong

发明人： Jong Seok Lee ,  Kyoung Kook Hong

IPC分类号： H01L29/78 ,  H01L29/06

CPC分类号： H01L29/0657 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7825

摘要： Disclosed is an LDMOS device, which is configured to reduce an electric field concentrated to a gate oxide film and lower an ON-resistance produced when the device conducts a forward action, and a method for manufacturing the same. More specifically, when an n-drift region is formed on a P-type substrate, a p-body is formed on the n-drift region through an epitaxial process, and then the p-body region is partially etched to form a plurality of p-epitaxial layers, so that when the device executes an action for blocking a reverse voltage, depletion layers are formed between the junction surfaces of the p-epitaxial layers and the n-drift region including the junction surfaces between the n-drift region and the p-body.

摘要翻译： 公开了一种LDMOS器件，其被配置为减少集中到栅极氧化物膜的电场并降低当器件进行正向动作时产生的导通电阻及其制造方法。 更具体地，当在P型衬底上形成n漂移区时，通过外延工艺在n漂移区上形成p体，然后部分蚀刻p体区以形成多个 使得当器件执行用于阻止反向电压的动作时，在p-外延层的连接表面和n漂移区之间形成耗尽层，该n-漂移区域包括n-漂移区和 p体。