公开(公告)号：US20130126969A1

公开(公告)日：2013-05-23

申请号：US13406726

申请日：2012-02-28

申请人： Jong Seok Lee ,  Kyoung Kook Hong

发明人： Jong Seok Lee ,  Kyoung Kook Hong

IPC分类号： H01L29/78

CPC分类号： H01L29/0657 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7825

摘要： Disclosed is an LDMOS device, which is configured to reduce an electric field concentrated to a gate oxide film and lower an ON-resistance produced when the device conducts a forward action, and a method for manufacturing the same. More specifically, when an n-drift region is formed on a P-type substrate, a p-body is formed on the n-drift region through an epitaxial process, and then the p-body region is partially etched to form a plurality of p-epitaxial layers, so that when the device executes an action for blocking a reverse voltage, depletion layers are formed between the junction surfaces of the p-epitaxial layers and the n-drift region including the junction surfaces between the n-drift region and the p-body.

摘要翻译： 公开了一种LDMOS器件，其被配置为减少集中到栅极氧化物膜的电场并降低当器件进行正向动作时产生的导通电阻及其制造方法。 更具体地，当在P型衬底上形成n漂移区时，通过外延工艺在n漂移区上形成p体，然后部分蚀刻p体区以形成多个 使得当器件执行用于阻止反向电压的动作时，在p-外延层的连接表面和n漂移区之间形成耗尽层，该n-漂移区域包括n-漂移区和 p体。

公开(公告)号：US20130112991A1

公开(公告)日：2013-05-09

申请号：US13371702

申请日：2012-02-13

申请人： Kyoung Kook Hong ,  Jong Seok Lee

发明人： Kyoung Kook Hong ,  Jong Seok Lee

IPC分类号： H01L29/872 ,  H01L21/329

CPC分类号： H01L29/872 ,  H01L21/02529 ,  H01L21/26506 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/66143

摘要： The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n− epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n− epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n− epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.

摘要翻译： 本发明提供一种碳化硅肖特基势垒二极管器件及其制造方法。 碳化硅肖特基二极体装置包括初级n外延层，n +外延区和肖特基金属层。 主n外延层沉积在与欧姆金属层的下表面连接的n +衬底上。 通过将n +离子注入初级n外延层的中心区域来形成n +外延区域。 肖特基金属层沉积在n +外延层上。

公开(公告)号：US08674436B2

公开(公告)日：2014-03-18

申请号：US13406726

申请日：2012-02-28

申请人： Jong Seok Lee ,  Kyoung Kook Hong

发明人： Jong Seok Lee ,  Kyoung Kook Hong

IPC分类号： H01L29/78 ,  H01L29/06

CPC分类号： H01L29/0657 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7825

摘要： Disclosed is an LDMOS device, which is configured to reduce an electric field concentrated to a gate oxide film and lower an ON-resistance produced when the device conducts a forward action, and a method for manufacturing the same. More specifically, when an n-drift region is formed on a P-type substrate, a p-body is formed on the n-drift region through an epitaxial process, and then the p-body region is partially etched to form a plurality of p-epitaxial layers, so that when the device executes an action for blocking a reverse voltage, depletion layers are formed between the junction surfaces of the p-epitaxial layers and the n-drift region including the junction surfaces between the n-drift region and the p-body.

摘要翻译： 公开了一种LDMOS器件，其被配置为减少集中到栅极氧化物膜的电场并降低当器件进行正向动作时产生的导通电阻及其制造方法。 更具体地，当在P型衬底上形成n漂移区时，通过外延工艺在n漂移区上形成p体，然后部分蚀刻p体区以形成多个 使得当器件执行用于阻止反向电压的动作时，在p-外延层的连接表面和n漂移区之间形成耗尽层，该n-漂移区域包括n-漂移区和 p体。

公开(公告)号：US08980732B2

公开(公告)日：2015-03-17

申请号：US13372931

申请日：2012-02-14

申请人： Kyoung Kook Hong ,  Jong Seok Lee

发明人： Kyoung Kook Hong ,  Jong Seok Lee

IPC分类号： H01L21/02 ,  H01L27/082 ,  H01L29/872 ,  H01L29/66 ,  H01L21/04 ,  H01L29/16

CPC分类号： H01L29/872 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/6606

摘要： The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n− epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film is formed on the n− epitaxial layer by heat treatment, and then a portion where a composite oxide film is to be formed is exposed by etching. Nitrogen is implanted into the n− epitaxial layer and the sacrificial oxide film using nitrogen plasma. A silicon nitride is deposited on the n− epitaxial layer and the sacrificial oxide film. The silicon nitride is thermally oxidized to form a composite oxide film. An oxide film in a portion where a Schottky metal is to be deposited is etched, and then the Schottky metal is deposited, thereby forming a silicon carbide Schottky barrier diode.

摘要翻译： 本发明提供一种制造碳化硅肖特基势垒二极管的方法。 在该方法中，在n +衬底上沉积n-外延层。 通过热处理在n外延层上形成牺牲氧化膜，然后通过蚀刻暴露要形成复合氧化物膜的部分。 使用氮等离子体将氮注入到n外延层和牺牲氧化膜中。 氮化硅沉积在n外延层和牺牲氧化膜上。 氮化硅被热氧化以形成复合氧化膜。 对要沉积肖特金属的部分中的氧化膜进行蚀刻，然后沉积肖特基金属，从而形成碳化硅肖特基势垒二极管。

公开(公告)号：US08779439B2

公开(公告)日：2014-07-15

申请号：US13371702

申请日：2012-02-13

申请人： Kyoung Kook Hong ,  Jong Seok Lee

发明人： Kyoung Kook Hong ,  Jong Seok Lee

IPC分类号： H01L29/872

CPC分类号： H01L29/872 ,  H01L21/02529 ,  H01L21/26506 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/66143

摘要： The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n− epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n− epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n− epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.

摘要翻译： 本发明提供一种碳化硅肖特基势垒二极管器件及其制造方法。 碳化硅肖特基二极体装置包括初级n外延层，n +外延区和肖特基金属层。 主n外延层沉积在与欧姆金属层的下表面连接的n +衬底上。 通过将n +离子注入初级n外延层的中心区域来形成n +外延区域。 肖特基金属层沉积在n +外延层上。

公开(公告)号：US20130115758A1

公开(公告)日：2013-05-09

申请号：US13372931

申请日：2012-02-14

申请人： Kyoung Kook Hong ,  Jong Seok Lee

发明人： Kyoung Kook Hong ,  Jong Seok Lee

IPC分类号： H01L21/20

CPC分类号： H01L29/872 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/6606

摘要： The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n− epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film is formed on the n− epitaxial layer by heat treatment, and then a portion where a composite oxide film is to be formed is exposed by etching. Nitrogen is implanted into the n− epitaxial layer and the sacrificial oxide film using nitrogen plasma. A silicon nitride is deposited on the n− epitaxial layer and the sacrificial oxide film. The silicon nitride is thermally oxidized to form a composite oxide film. An oxide film in a portion where a Schottky metal is to be deposited is etched, and then the Schottky metal is deposited, thereby forming a silicon carbide Schottky barrier diode.

摘要翻译： 本发明提供一种制造碳化硅肖特基势垒二极管的方法。 在该方法中，在n +衬底上沉积n-外延层。 通过热处理在n外延层上形成牺牲氧化膜，然后通过蚀刻暴露要形成复合氧化物膜的部分。 使用氮等离子体将氮注入到n外延层和牺牲氧化膜中。 氮化硅沉积在n外延层和牺牲氧化膜上。 氮化硅被热氧化以形成复合氧化膜。 对要沉积肖特金属的部分中的氧化膜进行蚀刻，然后沉积肖特基金属，从而形成碳化硅肖特基势垒二极管。