Methods of removing photoresists from low-k dielectric films are described. For example, a method includes forming and patterning a photoresist layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Trenches are formed in the exposed portions of the low-k dielectric layer. A plurality of process cycles is performed to remove the photoresist layer. Each process cycle includes forming a silicon source layer on surfaces of the trenches of the low-k dielectric layer, and exposing the photoresist layer to an oxygen source to form an Si—O-containing layer on the surfaces of the trenches of the low-k dielectric layer and to remove at least a portion of the photoresist layer.