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    METHOD OF REMOVING A PHOTORESIST FROM A LOW-K DIELECTRIC FILM
    1.
    发明申请
    METHOD OF REMOVING A PHOTORESIST FROM A LOW-K DIELECTRIC FILM 有权
    从低K电介质膜去除光电离元件的方法

    公开(公告)号：US20130023123A1

    公开(公告)日：2013-01-24

    申请号：US13187357

    申请日：2011-07-20

    申请人： Yifeng Zhou ,  Srinivas D. Nemani ,  Khoi Doan ,  Jeremiah T. P. Pender

    发明人： Yifeng Zhou ,  Srinivas D. Nemani ,  Khoi Doan ,  Jeremiah T. P. Pender

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31138 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L2221/1063

    摘要： Methods of removing photoresists from low-k dielectric films are described. For example, a method includes forming and patterning a photoresist layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Trenches are formed in the exposed portions of the low-k dielectric layer. A plurality of process cycles is performed to remove the photoresist layer. Each process cycle includes forming a silicon source layer on surfaces of the trenches of the low-k dielectric layer, and exposing the photoresist layer to an oxygen source to form an Si—O-containing layer on the surfaces of the trenches of the low-k dielectric layer and to remove at least a portion of the photoresist layer.

    摘要翻译： 描述了从低k电介质膜去除光致抗蚀剂的方法。 例如，一种方法包括在低k电介质层之上形成和图案化光致抗蚀剂层，低k电介质层设置在衬底之上。 沟槽形成在低k电介质层的露出部分。 执行多个处理循环以去除光致抗蚀剂层。 每个处理循环包括在低k电介质层的沟槽的表面上形成硅源层，并且将光致抗蚀剂层暴露于氧源以在低介电层的沟槽的表面上形成含Si-O的层， k电介质层并去除光致抗蚀剂层的至少一部分。

    PATTERNING OF MAGNETIC TUNNEL JUNCTION (MTJ) FILM STACKS
    6.
    发明申请
    PATTERNING OF MAGNETIC TUNNEL JUNCTION (MTJ) FILM STACKS 审中-公开
    磁性隧道结（MTJ）电影堆栈的图案

    公开(公告)号：US20140248718A1

    公开(公告)日：2014-09-04

    申请号：US14183257

    申请日：2014-02-18

    申请人： Jisoo Kim ,  Mang-mang Ling ,  Khoi Doan ,  Srinivas D. Nemani

    发明人： Jisoo Kim ,  Mang-mang Ling ,  Khoi Doan ,  Srinivas D. Nemani

    IPC分类号： H01L43/12

    CPC分类号： H01L43/12

    摘要： Chemical modification of non-volatile magnetic random access memory (MRAM) magnetic tunnel junctions (MTJs) for film stack etching is described. In an example, a method of etching a MTJ film stack includes modifying one or more layers of the MTJ film stack with a phosphorous trifluoride (PF3) source to provide modified regions of the MTJ film stack. The modified regions of the MTJ film stack are removed by a plasma etch process.

    摘要翻译： 描述了用于薄膜叠层蚀刻的非易失磁性随机存取存储器（MRAM）磁隧道结（MTJ）的化学修饰。 在一个实例中，蚀刻MTJ薄膜叠层的方法包括用三氟化磷（PF 3）源修饰MTJ薄膜叠层的一层或多层以提供MTJ薄膜叠层的修饰区域。 通过等离子体蚀刻工艺去除MTJ薄膜叠层的改性区域。

    METHODS FOR ETCHING MATERIALS USED IN MRAM APPLICATIONS
    7.
    发明申请
    METHODS FOR ETCHING MATERIALS USED IN MRAM APPLICATIONS 有权
    用于蚀刻在MRAM应用中使用的材料的方法

    公开(公告)号：US20140038311A1

    公开(公告)日：2014-02-06

    申请号：US13750892

    申请日：2013-01-25

    申请人： Jisoo Kim ,  Mang-Mang Ling ,  Khoi Doan ,  Chi Hong Ching ,  Srinivas D. Nemani

    发明人： Jisoo Kim ,  Mang-Mang Ling ,  Khoi Doan ,  Chi Hong Ching ,  Srinivas D. Nemani

    IPC分类号： H01L43/12

    CPC分类号： H01L43/12 ,  G11C11/16 ,  G11C11/161 ,  H01L27/222 ,  H01L43/08

    摘要： Embodiments of the invention provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in magnetoresistive random access memory applications. In one embodiment, a method of forming a MTJ structure on a substrate includes providing a substrate having a insulating tunneling layer disposed between a first and a second ferromagnetic layer disposed on the substrate, wherein the first ferromagnetic layer is disposed on the substrate followed by the insulating tunneling layer and the second ferromagnetic layer sequentially, supplying an ion implantation gas mixture to implant ions into the first ferromagnetic layer exposed by openings defined by the second ferromagnetic layer, and etching the implanted first ferromagnetic layer

    摘要翻译： 本发明的实施例提供了用于在磁阻随机存取存储器应用中在衬底上制造磁性隧道结（MTJ）结构的方法和装置。 在一个实施例中，在衬底上形成MTJ结构的方法包括提供衬底，其具有设置在设置在衬底上的第一和第二铁磁层之间的绝缘隧穿层，其中第一铁磁层设置在衬底上， 绝缘隧道层和第二铁磁层，提供离子注入气体混合物以将离子注入到由第二铁磁层限定的开口暴露的第一铁磁层中，并蚀刻所植入的第一铁磁层

    Method of removing a photoresist from a low-k dielectric film
    8.
    发明授权
    Method of removing a photoresist from a low-k dielectric film 有权
    从低k电介质膜去除光致抗蚀剂的方法

    公开(公告)号：US08980754B2

    公开(公告)日：2015-03-17

    申请号：US13187357

    申请日：2011-07-20

    申请人： Yifeng Zhou ,  Srinivas D. Nemani ,  Khoi Doan ,  Jeremiah T. P. Pender

    发明人： Yifeng Zhou ,  Srinivas D. Nemani ,  Khoi Doan ,  Jeremiah T. P. Pender

    IPC分类号： H01L21/302 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/02

    CPC分类号： H01L21/31138 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L2221/1063

    摘要： Methods of removing photoresists from low-k dielectric films are described. For example, a method includes forming and patterning a photoresist layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Trenches are formed in the exposed portions of the low-k dielectric layer. A plurality of process cycles is performed to remove the photoresist layer. Each process cycle includes forming a silicon source layer on surfaces of the trenches of the low-k dielectric layer, and exposing the photoresist layer to an oxygen source to form an Si—O-containing layer on the surfaces of the trenches of the low-k dielectric layer and to remove at least a portion of the photoresist layer.

    摘要翻译： 描述了从低k电介质膜去除光致抗蚀剂的方法。 例如，一种方法包括在低k电介质层之上形成和图案化光致抗蚀剂层，低k电介质层设置在衬底之上。 沟槽形成在低k电介质层的露出部分。 执行多个处理循环以去除光致抗蚀剂层。 每个处理循环包括在低k电介质层的沟槽的表面上形成硅源层，并且将光致抗蚀剂层暴露于氧源以在低介电层的沟槽的表面上形成含Si-O的层， k电介质层并去除光致抗蚀剂层的至少一部分。