Invention Grant
US08980761B2 Directional SIO2 etch using low-temperature etchant deposition and plasma post-treatment
有权
使用低温蚀刻剂沉积和等离子体后处理的定向SIO2蚀刻
- Patent Title: Directional SIO2 etch using low-temperature etchant deposition and plasma post-treatment
- Patent Title (中): 使用低温蚀刻剂沉积和等离子体后处理的定向SIO2蚀刻
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Application No.: US14031371Application Date: 2013-09-19
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Publication No.: US08980761B2Publication Date: 2015-03-17
- Inventor: David T. Or , Joshua Collins , Mei Chang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/3065 ; H01L21/02 ; H01L21/311
Abstract:
Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (NH4F), and annealing the substrate to a first temperature to sublimate one or more volatile byproducts.
Public/Granted literature
- US20140094036A1 DIRECTIONAL SIO2 ETCH USING LOW-TEMPERATURE ETCHANT DEPOSITION AND PLASMA POST-TREATMENT Public/Granted day:2014-04-03
Information query
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