公开(公告)号：US20140106083A1

公开(公告)日：2014-04-17

申请号：US13968057

申请日：2013-08-15

申请人： Applied Materials, Inc.

发明人： KAI WU ,  Kiejin Park ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Kazuya Daito ,  Joshua Collins ,  Benjamin C. Wang

IPC分类号： C23C16/452

CPC分类号： C23C16/452 ,  C23C16/08 ,  C23C16/50

摘要： A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.

摘要翻译： 本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。 该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中，将包含钨的第一成核层保形地沉积在衬底的暴露表面上，用活性氮处理至少一部分第一成核层，其中 将活化的氮优选沉积在表面区域上，使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应，使包含卤化钨的成核气体反应形成第二 使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。

公开(公告)号：US08980761B2

公开(公告)日：2015-03-17

申请号：US14031371

申请日：2013-09-19

申请人： Applied Materials, Inc.

发明人： David T. Or ,  Joshua Collins ,  Mei Chang

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/311

CPC分类号： H01L21/3065 ,  H01L21/02057 ,  H01L21/31116

摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (NH4F), and annealing the substrate to a first temperature to sublimate one or more volatile byproducts.

摘要翻译： 本文描述了用于处理衬底的方法。 方法可以包括将包含硅的衬底定位在处理室中，将等离子体传送到衬底的表面，同时偏置衬底，将衬底的表面暴露于氟化铵（NH 4 F），并将衬底退火到第一温度以升华 一种或多种挥发性副产物。

公开(公告)号：US09202745B2

公开(公告)日：2015-12-01

申请号：US14466821

申请日：2014-08-22

申请人： Applied Materials, Inc.

发明人： David T. Or ,  Joshua Collins ,  Mei Chang

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3065

CPC分类号： H01L21/76814 ,  H01L21/02041 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138

摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (NH4F), and annealing the substrate to a first temperature to sublimate one or more volatile byproducts.

摘要翻译： 本文描述了用于处理衬底的方法。 方法可以包括将包含硅的衬底定位在处理室中，将等离子体传送到衬底的表面，同时偏置衬底，将衬底的表面暴露于氟化铵（NH 4 F），并将衬底退火到第一温度以升华 一种或多种挥发性副产物。

公开(公告)号：US09169556B2

公开(公告)日：2015-10-27

申请号：US13968057

申请日：2013-08-15

申请人： Applied Materials, Inc.

发明人： Kai Wu ,  Kiejin Park ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Kazuya Daito ,  Joshua Collins ,  Benjamin C. Wang

IPC分类号： C23C16/08 ,  C23C16/14 ,  C23C16/50 ,  C23C16/452

CPC分类号： C23C16/452 ,  C23C16/08 ,  C23C16/50

摘要： A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.

摘要翻译： 本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。 该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中，将包含钨的第一成核层保形地沉积在衬底的暴露表面上，用活性氮处理至少一部分第一成核层，其中 将活化的氮优选沉积在表面区域上，使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应，使包含卤化钨的成核气体反应形成第二 使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。

公开(公告)号：US08900999B1

公开(公告)日：2014-12-02

申请号：US14036157

申请日：2013-09-25

申请人： Applied Materials, Inc.

发明人： Kai Wu ,  Sang-Hyeob Lee ,  Joshua Collins ,  Kiejin Park

IPC分类号： H01L21/44 ,  H01L21/02

CPC分类号： H01L21/28079 ,  H01L21/76882 ,  H01L21/76883

摘要： A method of filling a feature in a substrate with tungsten without forming a seam is presented. The tungsten is deposited by a thermal chemical vapor deposition (CVD) process using hydrogen (H2) and tungsten hexafluoride (WF6) precursor gases. The H2 to WF6 flow rate ratio is greater than 40 to 1, such as from 40 to 1 to 100 to 1. The substrate temperature during deposition is less than 300 degrees Celsius (° C.) and the processing pressure during deposition is greater than 300 Torr.

摘要翻译： 提出了一种在不形成接缝的情况下用钨填充衬底中的特征的方法。 通过使用氢（H 2）和六氟化钨（WF 6）前体气体的热化学气相沉积（CVD）工艺来沉积钨。 H2至WF6流量比大于40至1，例如40至1至100至1.沉积过程中的基板温度低于300摄氏度（℃），沉积过程中的处理压力大于 300乇

公开(公告)号：US20140273451A1

公开(公告)日：2014-09-18

申请号：US13914738

申请日：2013-06-11

申请人： Applied Materials, Inc.

发明人： Benjamin C. Wang ,  Amit Khandelwal ,  Avegerinos V. Gelatos ,  Joshua Collins ,  Kedar Sapre ,  Nitin K. Ingle

IPC分类号： H01L21/285

CPC分类号： H01L21/76877 ,  C23C16/045 ,  C23C16/14 ,  C23C16/56 ,  H01L21/28556

摘要： Methods of filling gaps with tungsten are described. The methods include a tungsten dep-etch-dep sequence to enhance gapfilling yet avoid difficulty in restarting deposition after the intervening etch. The first tungsten deposition may have a nucleation layer or seeding layer to assist growth of the first tungsten deposition. Restarting deposition with a less-than-conductive nucleation layer would impact function of an integrated circuit, and therefore avoiding tungsten “poisoning” during the etch is desirable. The etching step may be performed using a plasma to excite a halogen-containing precursor while the substrate at relatively low temperature (near room temperature or less). The plasma may be local or remote. Another method may be used in combination or separately and involves the introduction of a source of oxygen into the plasma in combination with the halogen-containing precursor.

摘要翻译： 描述了用钨填充间隙的方法。 这些方法包括用于增强间隙填充的钨去蚀刻 - 去除序列，但是避免在中间蚀刻之后重新开始沉积的困难。 第一钨沉积可以具有成核层或接种层以帮助第一钨沉积的生长。 用不太导电的成核层重新开始沉积将影响集成电路的功能，因此避免在蚀刻期间的钨“中毒”。 可以使用等离子体来进行蚀刻步骤，以在较低温度（接近室温或更低温度）的衬底下激发含卤素的前体。 等离子体可能是本地或远程的。 另一种方法可以组合使用或单独使用，并且涉及将氧源引入与含卤素前体组合的等离子体中。

公开(公告)号：US09653318B2

公开(公告)日：2017-05-16

申请号：US15007175

申请日：2016-01-26

申请人： Applied Materials, Inc.

发明人： David T. Or ,  Joshua Collins ,  Mei Chang

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/326 ,  H01L21/324

CPC分类号： H01L21/31116 ,  H01L21/02057 ,  H01L21/324 ,  H01L21/326

摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products.

公开(公告)号：US09275865B2

公开(公告)日：2016-03-01

申请号：US14068301

申请日：2013-10-31

申请人： Applied Materials, Inc.

发明人： Benjamin C. Wang ,  Joshua Collins ,  Michael Jackson ,  Avgerinos V. Gelatos ,  Amit Khandelwal

IPC分类号： H01L21/322 ,  H01L21/285 ,  H01L21/768 ,  C23C16/02 ,  C23C16/14

CPC分类号： H01L21/28556 ,  C23C16/0227 ,  C23C16/14 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods for plasma treatment of films to remove impurities are disclosed herein. Methods for removing impurities can include positioning a substrate with a barrier layer in a processing chamber, the barrier layer comprising a barrier metal and one or more impurities, maintaining the substrate at a bias, creating a plasma comprising a treatment gas, the treatment gas comprising an inert gas, delivering the treatment gas to the substrate to reduce the ratio of one or more impurities in the barrier layer, and reacting a deposition gas comprising a metal halide and hydrogen-containing gas to deposit a bulk metal layer on the barrier layer. The methods can further include the use of diborane to create selective nucleation in features over surface regions of the substrate.

摘要翻译： 本文公开了等离子体处理膜以去除杂质的方法。 用于去除杂质的方法可以包括将具有阻挡层的衬底定位在处理室中，阻挡层包含阻挡金属和一种或多种杂质，保持衬底处于偏压状态，产生包含处理气体的等离子体，所述处理气体包括 惰性气体，将处理气体输送到基板以减少阻挡层中的一种或多种杂质的比例，以及使包含金属卤化物和含氢气体的沉积气体在阻挡层上沉积体金属层。 该方法还可以包括使用乙硼烷在基材的表面区域上产生特征的选择性成核。

公开(公告)号：US09245769B2

公开(公告)日：2016-01-26

申请号：US14466808

申请日：2014-08-22

申请人： Applied Materials, Inc.

发明人： David T. Or ,  Joshua Collins ,  Mei Chang

IPC分类号： H01L21/48 ,  H01L21/326 ,  H01L21/311 ,  H01L21/02

CPC分类号： H01L21/31116 ,  H01L21/02057 ,  H01L21/324 ,  H01L21/326

摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products.

摘要翻译： 本文描述了用于处理衬底的方法。 方法可以包括将具有包括氧化硅层的暴露表面的衬底定位在处理室中，偏置衬底，处理衬底以使氧化硅层的一部分粗糙化，将衬底加热到​​第一温度，暴露暴露的表面 将基底置于氟化铵中以形成一种或多种挥发性产物，同时保持第一温度，并将基材加热到高于第一温度的第二温度以升华挥发性产物。

公开(公告)号：US09051655B2

公开(公告)日：2015-06-09

申请号：US14028099

申请日：2013-09-16

申请人： Applied Materials, Inc.

发明人： Kai Wu ,  Sang Ho Yu ,  Kie Jin Park ,  Glen T. Mori ,  Joshua Collins

IPC分类号： B44C1/22 ,  C23F1/00 ,  C23F3/00 ,  C23F4/00 ,  H01J37/32

CPC分类号： C23F4/00 ,  C23G5/00 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/02068

摘要： Embodiments described herein generally provide a method for performing a semiconductor precleaning process. More specifically, embodiments provided herein relate to boron ionization for aluminum oxide etch enhancement. A process for removing native oxide from aluminum may utilize ionized boron alone or in combination with a halogen plasma. The ionized boron may provide improved aluminum oxide etching properties while being highly selective for native oxides more generally.

摘要翻译： 本文描述的实施例通常提供了一种用于执行半导体预清洗处理的方法。 更具体地，本文提供的实施方案涉及用于氧化铝蚀刻增强的硼电离。 从铝中除去天然氧化物的方法可以单独使用电离硼或与卤素等离子体组合使用。 电离硼可以提供改进的氧化铝蚀刻性质，同时更通常地对天然氧化物具有高选择性。