A semiconductor structure and an integrated circuit are provided. The semiconductor structure includes a first field-effect transistor (FET), a second FET, an isolation structure, and a body electrode. The first FET includes a first active body having a first type conductivity. The second FET includes a second active body having the first type conductivity. The first active body and the second active body are isolated from each other by the isolation structure. The body electrode has the first type conductivity and formed in the second active body.