Invention Grant
- Patent Title: Secondary memory to store error correction information
- Patent Title (中): 二次存储器存储纠错信息
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Application No.: US13907524Application Date: 2013-05-31
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Publication No.: US08984370B2Publication Date: 2015-03-17
- Inventor: Giovanni Campardo , Stefano Corno , Gian Pietro Vanalli , Manuela Scognamiglio , Danilo Caraccio , Federico Tiziani , Massimiliano Magni , Andrea Ghilardelli
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: G11C29/42
- IPC: G11C29/42 ; G06F11/10 ; G11C29/54 ; G11C29/04
Abstract:
A system and method are disclosed in which a first non-volatile memory includes blocks that store data, and a second memory that stores error correction information related to the blocks storing the data. The first memory and the second memory are of different types.
Public/Granted literature
- US20130332800A1 SECONDARY MEMORY TO STORE ERROR CORRECTION INFORMATION Public/Granted day:2013-12-12
Information query
