ERROR CORRECTING CODES FOR INCREASED STORAGE CAPACITY IN MULTILEVEL MEMORY DEVICES
    8.
    发明申请
    ERROR CORRECTING CODES FOR INCREASED STORAGE CAPACITY IN MULTILEVEL MEMORY DEVICES 有权
    在多个存储器件中增加存储容量的错误校正代码

    公开(公告)号:US20130191697A1

    公开(公告)日:2013-07-25

    申请号:US13712880

    申请日:2012-12-12

    Abstract: Embodiments of the present disclosure provide methods, systems, and apparatuses related to multilevel encoding with error correction. In some embodiments, data may be programmed and/or read from a matrix of nonvolatile memory cells with concatenated encoding/decoding schemes. In some embodiments, a calculation module may determine an actual bit per cell value of a given combination of parameters of a nonvolatile memory device. Still other embodiments may be described and claimed.

    Abstract translation: 本公开的实施例提供了与具有纠错的多级编码相关的方法,系统和装置。 在一些实施例中,可以使用级联的编码/解码方案从非易失性存储器单元的矩阵中编程和/或读取数据。 在一些实施例中,计算模块可以确定非易失性存储器件的给定参数组合的每个单元值的实际位数。 可以描述和要求保护其他实施例。

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