Invention Grant
US08986494B2 Plasma processing apparatus and temperature measuring method and apparatus used therein
有权
等离子体处理装置及其中使用的温度测量方法和装置
- Patent Title: Plasma processing apparatus and temperature measuring method and apparatus used therein
- Patent Title (中): 等离子体处理装置及其中使用的温度测量方法和装置
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Application No.: US12698616Application Date: 2010-02-02
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Publication No.: US08986494B2Publication Date: 2015-03-24
- Inventor: Tatsuo Matsudo , Chishlo Koshimizu , Jun Abe
- Applicant: Tatsuo Matsudo , Chishlo Koshimizu , Jun Abe
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2009-021205 20090202; JP2009-074603 20090325
- Main IPC: C23C16/00
- IPC: C23C16/00 ; G01J5/08 ; H01L21/67 ; G01J5/00 ; G01J5/04 ; G01K11/00
Abstract:
A plasma processing apparatus includes a temperature measuring unit; airtightly sealed temperature measuring windows provided in a mounting table, for optically communicating to transmit a measurement beam through a top surface and a bottom surface of the mounting table; and one or more connection members for connecting the mounting table and a base plate, which is provided in a space between the mounting table and the base plate. In the plasma processing apparatus, a space above the mounting table is set to be maintained under a vacuum atmosphere, and a space between the mounting table and the base plate is set to be maintained under a normal pressure atmosphere, and each collimator is fixed to the base plate at a position corresponding to each temperature measuring window, thereby measuring a temperature of the substrate via the temperature measuring windows by the temperature measuring unit.
Public/Granted literature
- US20100206482A1 PLASMA PROCESSING APPARATUS AND TEMPERATURE MEASURING METHOD AND APPARATUS USED THEREIN Public/Granted day:2010-08-19
Information query
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