Invention Grant
- Patent Title: Method of patterning a low-k dielectric film
- Patent Title (中): 图案化低k电介质膜的方法
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Application No.: US14159832Application Date: 2014-01-21
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Publication No.: US08987139B2Publication Date: 2015-03-24
- Inventor: Chia-Ling Kao , Sean S. Kang , Srinivas D. Nemani
- Applicant: Chia-Ling Kao , Sean S. Kang , Srinivas D. Nemani
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/321 ; H01L21/3213
Abstract:
Methods of patterning low-k dielectric films are described. In an example, In an embodiment, a method of patterning a low-k dielectric film involves forming and patterning a metal nitride mask layer above a low-k dielectric layer. The low-k dielectric layer is disposed above a substrate. The method also involves passivating the metal nitride mask layer by treating with a plasma based on O2/N2/SixFy. The method also involves etching a portion of the low-k dielectric layer.
Public/Granted literature
- US20140213060A1 METHOD OF PATTERNING A LOW-K DIELECTRIC FILM Public/Granted day:2014-07-31
Information query
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